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IRFU9014PBF-VB Product details
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IRFU9014PBF-VB Product Introduction
**IRFU9014PBF-VB** is a high-performance P-Channel MOSFET in TO251 package, designed based on advanced Trench technology. This MOSFET provides -60V drain-source withstand voltage and -20A maximum drain current, designed for high current and high voltage load switching applications. IRFU9014PBF-VB has excellent on-resistance performance, with an on-resistance of 80mΩ @ VGS = 4.5V and 66mΩ @ VGS = 10V. These features make it very suitable for high-efficiency power switching and power management applications.
**IRFU9014PBF-VB** is a high-performance P-Channel MOSFET in TO251 package, designed based on advanced Trench technology. This MOSFET provides -60V drain-source withstand voltage and -20A maximum drain current, designed for high current and high voltage load switching applications. IRFU9014PBF-VB has excellent on-resistance performance, with an on-resistance of 80mΩ @ VGS = 4.5V and 66mΩ @ VGS = 10V. These features make it very suitable for high-efficiency power switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | 66mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-P-Channel
- **Drain-source withstand voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON)）**:
- 80mΩ @ VGS = 4.5V
- 66mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -20A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single-P-Channel
- **Drain-source withstand voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON)）**:
- 80mΩ @ VGS = 4.5V
- 66mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -20A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High-efficiency power switch**: IRFU9014PBF-VB is very suitable for high-efficiency power switch applications due to its low on-resistance and high current capability. Especially in the case of high current load control, such as power switch in power management system, it can effectively reduce switching loss and improve system efficiency.
2. **DC-DC converter**: In the design of DC-DC converters, especially those requiring high-efficiency load switching, IRFU9014PBF-VB can be used as a switching element. Its excellent on-resistance characteristics enable it to maintain high efficiency performance in high current applications, suitable for boost converters, buck converters, etc.
3. **Electric vehicle system**: In electric vehicles, IRFU9014PBF-VB is suitable for high current switching applications, such as battery switching and motor control. Its high load capacity and low on-resistance characteristics enable it to perform well in battery management systems and electric drive systems of electric vehicles, ensuring high efficiency and reliability of the system.
4. **Power Management Module**: This MOSFET is also suitable for various power management modules, such as battery protection circuits and power switch modules. In these applications, it can effectively manage and control the current flow, provide stable performance and reduce power loss.
The high current handling capability and low on-resistance of the IRFU9014PBF-VB make it excellent in applications that require efficient power switching and high current management, such as high-efficiency power switches, DC-DC converters, electric vehicle systems and power management modules.
1. **High-efficiency power switch**: IRFU9014PBF-VB is very suitable for high-efficiency power switch applications due to its low on-resistance and high current capability. Especially in the case of high current load control, such as power switch in power management system, it can effectively reduce switching loss and improve system efficiency.
2. **DC-DC converter**: In the design of DC-DC converters, especially those requiring high-efficiency load switching, IRFU9014PBF-VB can be used as a switching element. Its excellent on-resistance characteristics enable it to maintain high efficiency performance in high current applications, suitable for boost converters, buck converters, etc.
3. **Electric vehicle system**: In electric vehicles, IRFU9014PBF-VB is suitable for high current switching applications, such as battery switching and motor control. Its high load capacity and low on-resistance characteristics enable it to perform well in battery management systems and electric drive systems of electric vehicles, ensuring high efficiency and reliability of the system.
4. **Power Management Module**: This MOSFET is also suitable for various power management modules, such as battery protection circuits and power switch modules. In these applications, it can effectively manage and control the current flow, provide stable performance and reduce power loss.
The high current handling capability and low on-resistance of the IRFU9014PBF-VB make it excellent in applications that require efficient power switching and high current management, such as high-efficiency power switches, DC-DC converters, electric vehicle systems and power management modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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