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IRFU9010P-VB Product details
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IRFU9010P-VB MOSFET Product Introduction
**IRFU9010P-VB** is a high-performance P-Channel MOSFET in TO251 package. It has a drain-source withstand voltage (VDS) of -60V and a maximum drain current (ID) of up to -20A. This MOSFET uses Trench technology to provide low on-state resistance (RDS(ON)) for high-efficiency switching operation. IRFU9010P-VB is designed for applications such as load switching and reverse power protection, and is particularly suitable for scenarios requiring high current and low power consumption.
**IRFU9010P-VB** is a high-performance P-Channel MOSFET in TO251 package. It has a drain-source withstand voltage (VDS) of -60V and a maximum drain current (ID) of up to -20A. This MOSFET uses Trench technology to provide low on-state resistance (RDS(ON)) for high-efficiency switching operation. IRFU9010P-VB is designed for applications such as load switching and reverse power protection, and is particularly suitable for scenarios requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | 66mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
IRFU9010P-VB MOSFET Detailed parameter description
- **Package**: TO251
- **Configuration**: Single P-Channel
- **Drain-source withstand voltage (VDS)**: -60V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-state resistance (RDS(ON))**:
- 80mΩ @ VGS = 4.5V
- 66mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -20A
- **Technology**: Trench technology
- **Package**: TO251
- **Configuration**: Single P-Channel
- **Drain-source withstand voltage (VDS)**: -60V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-state resistance (RDS(ON))**:
- 80mΩ @ VGS = 4.5V
- 66mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -20A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power Management**:
- In power management systems, the IRFU9010P-VB's low RDS(ON) and high current capability make it an ideal load switch. It can effectively control current flow and reduce power loss, and is used in power switches, power modules, and power protection circuits.
2. **Reverse Power Protection**:
- This MOSFET can be used in reverse power protection circuits to protect sensitive electronic devices from damage caused by reverse power connection. Its high withstand voltage and low RDS(ON) can ensure that the current flow is effectively cut off when the power is reversed, protecting the circuit safety.
3. **Load Switch**:
- In load switch applications, the IRFU9010P-VB can handle larger load currents and is suitable for load control in switching battery packs, power tools, and household appliances. Its high current handling capability and low power loss make it suitable for efficient load switch designs.
4. **Inverter**:
- In inverter systems, this MOSFET can be used as a switching element to convert DC voltage to AC voltage. Its low RDS(ON) improves the efficiency of the inverter and is suitable for use in solar inverters and UPS systems.
5. **Automotive Electronics**:
- In automotive electronic systems, IRFU9010P-VB can be used in various switching and protection applications, such as battery protection, load switching, and power control. Its high current capability and stable performance can meet the high requirements of automotive electronic systems.
As a high-efficiency P-Channel MOSFET, IRFU9010P-VB is widely used in power management, protection circuits and switching applications due to its high current handling capability and low power loss.
1. **Power Management**:
- In power management systems, the IRFU9010P-VB's low RDS(ON) and high current capability make it an ideal load switch. It can effectively control current flow and reduce power loss, and is used in power switches, power modules, and power protection circuits.
2. **Reverse Power Protection**:
- This MOSFET can be used in reverse power protection circuits to protect sensitive electronic devices from damage caused by reverse power connection. Its high withstand voltage and low RDS(ON) can ensure that the current flow is effectively cut off when the power is reversed, protecting the circuit safety.
3. **Load Switch**:
- In load switch applications, the IRFU9010P-VB can handle larger load currents and is suitable for load control in switching battery packs, power tools, and household appliances. Its high current handling capability and low power loss make it suitable for efficient load switch designs.
4. **Inverter**:
- In inverter systems, this MOSFET can be used as a switching element to convert DC voltage to AC voltage. Its low RDS(ON) improves the efficiency of the inverter and is suitable for use in solar inverters and UPS systems.
5. **Automotive Electronics**:
- In automotive electronic systems, IRFU9010P-VB can be used in various switching and protection applications, such as battery protection, load switching, and power control. Its high current capability and stable performance can meet the high requirements of automotive electronic systems.
As a high-efficiency P-Channel MOSFET, IRFU9010P-VB is widely used in power management, protection circuits and switching applications due to its high current handling capability and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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