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IRFU8203PBF-VB Product details
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Product Introduction
**IRFU8203PBF-VB** is a high-performance single N-channel MOSFET in TO251 package. This MOSFET has extremely low on-resistance and high current carrying capacity, and is particularly suitable for applications that require high efficiency and high power density. Using Trench technology, this MOSFET performs well in switching operations and can operate stably under low resistance and high current conditions. Its low RDS(ON) value and high ID make it very suitable for applications in high power switches and power management systems.
**IRFU8203PBF-VB** is a high-performance single N-channel MOSFET in TO251 package. This MOSFET has extremely low on-resistance and high current carrying capacity, and is particularly suitable for applications that require high efficiency and high power density. Using Trench technology, this MOSFET performs well in switching operations and can operate stably under low resistance and high current conditions. Its low RDS(ON) value and high ID make it very suitable for applications in high power switches and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IRFU8203PBF-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Model**: IRFU8203PBF-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
1. **High Power Switch**:
- IRFU8203PBF-VB is suitable for various high power switching applications due to its low RDS(ON) value and high drain current capability. It is able to maintain low power consumption under high current conditions, which is very suitable for use in power switches, power management modules, etc., which require efficient current control and low heat generation.
2. **Power Management**:
- In power management systems such as DC-DC converters and power adapters, this MOSFET is able to provide low on-resistance to ensure efficient power conversion. It is suitable for power management applications that require high performance and stability, helping to improve the energy efficiency and reliability of the overall system.
3. **Motor Drive**:
- IRFU8203PBF-VB performs well in motor drive circuits, especially in applications that need to handle high currents, such as DC motor drivers and stepper motor controllers. It can effectively handle high currents in motor drives while reducing power consumption and heat, improving the operating efficiency of the motor.
4. **Load Switch**:
- Due to its high current carrying capacity and low RDS(ON) value, IRFU8203PBF-VB is also widely used in various load switch circuits. It can stably control large current loads and maintain low power consumption during switching operations, suitable for switching applications in various electronic devices.
1. **High Power Switch**:
- IRFU8203PBF-VB is suitable for various high power switching applications due to its low RDS(ON) value and high drain current capability. It is able to maintain low power consumption under high current conditions, which is very suitable for use in power switches, power management modules, etc., which require efficient current control and low heat generation.
2. **Power Management**:
- In power management systems such as DC-DC converters and power adapters, this MOSFET is able to provide low on-resistance to ensure efficient power conversion. It is suitable for power management applications that require high performance and stability, helping to improve the energy efficiency and reliability of the overall system.
3. **Motor Drive**:
- IRFU8203PBF-VB performs well in motor drive circuits, especially in applications that need to handle high currents, such as DC motor drivers and stepper motor controllers. It can effectively handle high currents in motor drives while reducing power consumption and heat, improving the operating efficiency of the motor.
4. **Load Switch**:
- Due to its high current carrying capacity and low RDS(ON) value, IRFU8203PBF-VB is also widely used in various load switch circuits. It can stably control large current loads and maintain low power consumption during switching operations, suitable for switching applications in various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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