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IRFU5505P-VB Product details
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IRFU5505P-VB Product Introduction
IRFU5505P-VB is a high-performance P-Channel MOSFET in TO251 package. It adopts advanced Trench technology and has a maximum drain-source voltage (VDS) of -60V and a maximum gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is -1.7V, and the on-resistance (RDS(ON)) is 80mΩ@VGS=4.5V and 66mΩ@VGS=10V, respectively, supporting a maximum drain current (ID) of -20A. The design of IRFU5505P-VB is suitable for load switch applications that require high current and low on-resistance, and is widely used in power management and load switching fields.
IRFU5505P-VB is a high-performance P-Channel MOSFET in TO251 package. It adopts advanced Trench technology and has a maximum drain-source voltage (VDS) of -60V and a maximum gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is -1.7V, and the on-resistance (RDS(ON)) is 80mΩ@VGS=4.5V and 66mΩ@VGS=10V, respectively, supporting a maximum drain current (ID) of -20A. The design of IRFU5505P-VB is suitable for load switch applications that require high current and low on-resistance, and is widely used in power management and load switching fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | 66mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Model**: IRFU5505P-VB
- **Package**: TO251
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 80mΩ@VGS=4.5V
- 66mΩ@VGS=10V
- **Maximum drain current (ID)**: -20A
- **Technology**: Trench
- **Model**: IRFU5505P-VB
- **Package**: TO251
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 80mΩ@VGS=4.5V
- 66mΩ@VGS=10V
- **Maximum drain current (ID)**: -20A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management System**: In power management applications such as DC-DC converters and power modules, the IRFU5505P-VB can be used as a switching element. Its low on-resistance and high current capability enable it to efficiently control the flow of power, improving the overall efficiency and stability of the system.
2. **Load Switch**: In various load switching applications, especially in circuits that require reverse current flow, the IRFU5505P-VB can effectively switch loads as a P-Channel MOSFET. Its current carrying capability up to -20A and low on-resistance ensure reliable switching and control of the load.
3. **Battery Management System**: In battery management systems, the IRFU5505P-VB can be used for switching control of battery packs. Its low on-resistance helps reduce power losses and improve system efficiency, while its high current capability can handle the high current demands during battery charging and discharging.
4. **Load Protection**: In load protection circuits, IRFU5505P-VB can effectively isolate and protect circuits from overcurrent and overvoltage. Its high current handling capability and low on-resistance make it an ideal choice in load protection systems.
These application scenarios demonstrate the wide applicability of IRFU5505P-VB in switching applications that require high current and low on-resistance, especially in the field of power management and load switching.
1. **Power Management System**: In power management applications such as DC-DC converters and power modules, the IRFU5505P-VB can be used as a switching element. Its low on-resistance and high current capability enable it to efficiently control the flow of power, improving the overall efficiency and stability of the system.
2. **Load Switch**: In various load switching applications, especially in circuits that require reverse current flow, the IRFU5505P-VB can effectively switch loads as a P-Channel MOSFET. Its current carrying capability up to -20A and low on-resistance ensure reliable switching and control of the load.
3. **Battery Management System**: In battery management systems, the IRFU5505P-VB can be used for switching control of battery packs. Its low on-resistance helps reduce power losses and improve system efficiency, while its high current capability can handle the high current demands during battery charging and discharging.
4. **Load Protection**: In load protection circuits, IRFU5505P-VB can effectively isolate and protect circuits from overcurrent and overvoltage. Its high current handling capability and low on-resistance make it an ideal choice in load protection systems.
These application scenarios demonstrate the wide applicability of IRFU5505P-VB in switching applications that require high current and low on-resistance, especially in the field of power management and load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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