中文
English
IRFU5305PBF-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**IRFU5305PBF-VB** is a high-performance P-channel MOSFET in TO251 package, manufactured using advanced Trench technology. It is designed for medium negative voltage applications, can withstand drain-source voltages up to -60V, and handle drain currents up to -50A. This MOSFET is particularly suitable for load switching and power management applications, and its low on-resistance and low gate threshold voltage make it perform well in negative voltage circuits.
**IRFU5305PBF-VB** is a high-performance P-channel MOSFET in TO251 package, manufactured using advanced Trench technology. It is designed for medium negative voltage applications, can withstand drain-source voltages up to -60V, and handle drain currents up to -50A. This MOSFET is particularly suitable for load switching and power management applications, and its low on-resistance and low gate threshold voltage make it perform well in negative voltage circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Model**: IRFU5305PBF-VB
- **Package**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 17mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Drain current (ID)**: -50A
- **Technology**: Trench
- **Model**: IRFU5305PBF-VB
- **Package**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 17mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Drain current (ID)**: -50A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The design and features of the **IRFU5305PBF-VB** make it ideal for the following applications and modules:
1. **Load switch**: The high negative voltage tolerance and low on-resistance of this MOSFET make it suitable as an efficient load switch, and it excels in applications that require high current and negative voltage operation. For example, it can be used for load switching in battery management systems to help control the battery charging and discharging process.
2. **Power management**: In power management systems, the IRFU5305PBF-VB can be used as an efficient negative voltage switch to handle high current loads. It performs stably in power conversion and regulation circuits and is suitable for switching and controlling high power supplies to ensure system stability and efficiency.
3. **Electric vehicles**: This MOSFET is also suitable for power and load management systems in electric vehicles. Due to its high negative voltage handling capability and high current handling capability, it can be used in high-voltage power systems in electric vehicles to control motor drives and other high current loads.
4. **Power Amplifier**: In power amplifier circuits, the IRFU5305PBF-VB can be used as a negative voltage switching element to handle high power signals. Its low on-resistance and high current capability make it suitable for high power amplifier applications, such as audio power amplifiers and RF amplifiers.
5. **LED Driver**: In LED driver circuits, the IRFU5305PBF-VB can be used to efficiently control LED lighting systems. Its low on-resistance can effectively drive high current LED lighting, suitable for a variety of high power LED applications, including indoor and outdoor lighting systems.
These applications require MOSFETs to operate stably under negative voltage and high current conditions, and the high performance characteristics of the IRFU5305PBF-VB make it an ideal choice for these applications.
The design and features of the **IRFU5305PBF-VB** make it ideal for the following applications and modules:
1. **Load switch**: The high negative voltage tolerance and low on-resistance of this MOSFET make it suitable as an efficient load switch, and it excels in applications that require high current and negative voltage operation. For example, it can be used for load switching in battery management systems to help control the battery charging and discharging process.
2. **Power management**: In power management systems, the IRFU5305PBF-VB can be used as an efficient negative voltage switch to handle high current loads. It performs stably in power conversion and regulation circuits and is suitable for switching and controlling high power supplies to ensure system stability and efficiency.
3. **Electric vehicles**: This MOSFET is also suitable for power and load management systems in electric vehicles. Due to its high negative voltage handling capability and high current handling capability, it can be used in high-voltage power systems in electric vehicles to control motor drives and other high current loads.
4. **Power Amplifier**: In power amplifier circuits, the IRFU5305PBF-VB can be used as a negative voltage switching element to handle high power signals. Its low on-resistance and high current capability make it suitable for high power amplifier applications, such as audio power amplifiers and RF amplifiers.
5. **LED Driver**: In LED driver circuits, the IRFU5305PBF-VB can be used to efficiently control LED lighting systems. Its low on-resistance can effectively drive high current LED lighting, suitable for a variety of high power LED applications, including indoor and outdoor lighting systems.
These applications require MOSFETs to operate stably under negative voltage and high current conditions, and the high performance characteristics of the IRFU5305PBF-VB make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
