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IRFU430AP-VB Product details
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Product Introduction
**IRFU430AP-VB** is a high voltage single N-channel MOSFET in TO251 package, which can withstand drain-source voltage up to 650V, and is very suitable for applications that need to handle high voltage current. The device adopts planar technology, has excellent voltage and current control capabilities, and can operate stably under harsh high voltage conditions. Despite its high on-resistance, it still has good switching characteristics and reliability in high voltage switching and power conversion applications.
**IRFU430AP-VB** is a high voltage single N-channel MOSFET in TO251 package, which can withstand drain-source voltage up to 650V, and is very suitable for applications that need to handle high voltage current. The device adopts planar technology, has excellent voltage and current control capabilities, and can operate stably under harsh high voltage conditions. Despite its high on-resistance, it still has good switching characteristics and reliability in high voltage switching and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IRFU430AP-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar technology
- **Model**: IRFU430AP-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar technology
Domain and module applications：
Applications and modules
1. **High-voltage power converter**:
- **IRFU430AP-VB** is ideal for high-voltage power converters and inverters. These systems are often used in scenarios where high-voltage power needs to be converted to lower voltage outputs, such as industrial equipment and power control modules in power grid systems. Because it can withstand high voltages of 650V, it can ensure the stability and efficiency of current control in these high-voltage applications.
2. **Grid power control**:
- Due to its high-voltage capability, this MOSFET is widely used in power control modules in the power grid, such as smart meters, relay controls, etc. Its high-voltage resistance allows stable operation and protection when handling large loads or grid voltage fluctuations, ensuring that the system operates reliably in high-voltage environments.
3. **Inductive load switch**:
- IRFU430AP-VB also has advantages in inductive load switching applications, such as transformer switches, relay drive circuits, etc. Inductive loads typically generate higher reverse voltages, and this MOSFET can effectively handle the voltage rebound generated by these inductors to protect the safety of the circuit.
4. **Industrial Control**:
- Due to its ability to handle high voltage and high current, the IRFU430AP-VB is widely used in the field of industrial control, such as in robots, motor control, and power management systems for large machinery. Its high voltage tolerance ensures stability and reliability in these harsh environments.
1. **High-voltage power converter**:
- **IRFU430AP-VB** is ideal for high-voltage power converters and inverters. These systems are often used in scenarios where high-voltage power needs to be converted to lower voltage outputs, such as industrial equipment and power control modules in power grid systems. Because it can withstand high voltages of 650V, it can ensure the stability and efficiency of current control in these high-voltage applications.
2. **Grid power control**:
- Due to its high-voltage capability, this MOSFET is widely used in power control modules in the power grid, such as smart meters, relay controls, etc. Its high-voltage resistance allows stable operation and protection when handling large loads or grid voltage fluctuations, ensuring that the system operates reliably in high-voltage environments.
3. **Inductive load switch**:
- IRFU430AP-VB also has advantages in inductive load switching applications, such as transformer switches, relay drive circuits, etc. Inductive loads typically generate higher reverse voltages, and this MOSFET can effectively handle the voltage rebound generated by these inductors to protect the safety of the circuit.
4. **Industrial Control**:
- Due to its ability to handle high voltage and high current, the IRFU430AP-VB is widely used in the field of industrial control, such as in robots, motor control, and power management systems for large machinery. Its high voltage tolerance ensures stability and reliability in these harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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