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IRFU420APBF-VB Product details
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Product Introduction
**IRFU420APBF-VB** is a high voltage N-Channel MOSFET in TO251 package using Plannar technology. Designed for high voltage applications, this MOSFET has high on-resistance and moderate current handling capability, making it suitable for circuit designs requiring high voltage isolation. Its reliability and robustness make it an excellent choice for power electronics applications, and it is suitable for a variety of high voltage control and switching applications.
**IRFU420APBF-VB** is a high voltage N-Channel MOSFET in TO251 package using Plannar technology. Designed for high voltage applications, this MOSFET has high on-resistance and moderate current handling capability, making it suitable for circuit designs requiring high voltage isolation. Its reliability and robustness make it an excellent choice for power electronics applications, and it is suitable for a variety of high voltage control and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IRFU420APBF-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain to source voltage (VDS)**: 650V
- **Maximum gate to source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2200mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 4A
- **Technology**: Plannar
- **Model**: IRFU420APBF-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain to source voltage (VDS)**: 650V
- **Maximum gate to source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2200mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 4A
- **Technology**: Plannar
Domain and module applications：
Applicable fields and modules
1. **Power inverter**: The high voltage handling capability (650V) of IRFU420APBF-VB makes it particularly suitable for use in power inverters, especially in the inverter circuit of high-voltage DC power supply. It can work stably under high voltage conditions to ensure efficient conversion and reliable operation of the system.
2. **Industrial motor control**: In industrial motor control applications, MOSFETs are usually used to handle high voltages and small current loads. Due to its high withstand voltage characteristics, IRFU420APBF-VB is very suitable for controlling the start and operation of high-voltage motors, providing precise voltage control and isolation.
3. **High-voltage switching power supply**: This MOSFET performs well in high-voltage switching power supply applications and is suitable for circuit designs that need to handle high voltage inputs. Its high voltage capability makes it a key switching element in the design, enabling robust switching operation at high voltage.
4. **Lighting drive system**: The high voltage handling capability of IRFU420APBF-VB makes it suitable for high-voltage lighting systems, especially high-power LED lighting applications that require high voltage drive. It can ensure that the system works stably under high voltage environment and effectively reduce power loss.
5. **Power protection module**: The high voltage handling capability of this MOSFET is suitable for various power protection modules, especially application scenarios that need to protect circuit components under high voltage. It can provide reliable high voltage switch control to ensure the safety and stability of the equipment under high voltage sudden conditions.
1. **Power inverter**: The high voltage handling capability (650V) of IRFU420APBF-VB makes it particularly suitable for use in power inverters, especially in the inverter circuit of high-voltage DC power supply. It can work stably under high voltage conditions to ensure efficient conversion and reliable operation of the system.
2. **Industrial motor control**: In industrial motor control applications, MOSFETs are usually used to handle high voltages and small current loads. Due to its high withstand voltage characteristics, IRFU420APBF-VB is very suitable for controlling the start and operation of high-voltage motors, providing precise voltage control and isolation.
3. **High-voltage switching power supply**: This MOSFET performs well in high-voltage switching power supply applications and is suitable for circuit designs that need to handle high voltage inputs. Its high voltage capability makes it a key switching element in the design, enabling robust switching operation at high voltage.
4. **Lighting drive system**: The high voltage handling capability of IRFU420APBF-VB makes it suitable for high-voltage lighting systems, especially high-power LED lighting applications that require high voltage drive. It can ensure that the system works stably under high voltage environment and effectively reduce power loss.
5. **Power protection module**: The high voltage handling capability of this MOSFET is suitable for various power protection modules, especially application scenarios that need to protect circuit components under high voltage. It can provide reliable high voltage switch control to ensure the safety and stability of the equipment under high voltage sudden conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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