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IRFU4104PBF-VB Product details
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IRFU4104PBF-VB Product Introduction
**IRFU4104PBF-VB** is a high-performance N-Channel MOSFET in TO251 package, designed based on advanced Trench technology. It has a drain-source withstand voltage of 40V and a maximum drain current capability of 85A, and is designed for high-efficiency switching and current handling applications. Its low on-resistance (RDS(ON)), 6.5mΩ @ VGS=4.5V and 5mΩ @ VGS=10V, ensures minimal loss in high current state, significantly improving system efficiency. IRFU4104PBF-VB is very suitable for power management and power conversion and other occasions requiring high efficiency.
**IRFU4104PBF-VB** is a high-performance N-Channel MOSFET in TO251 package, designed based on advanced Trench technology. It has a drain-source withstand voltage of 40V and a maximum drain current capability of 85A, and is designed for high-efficiency switching and current handling applications. Its low on-resistance (RDS(ON)), 6.5mΩ @ VGS=4.5V and 5mΩ @ VGS=10V, ensures minimal loss in high current state, significantly improving system efficiency. IRFU4104PBF-VB is very suitable for power management and power conversion and other occasions requiring high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON)）**:
- 6.5mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON)）**:
- 6.5mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power Management and Converters**: IRFU4104PBF-VB is suitable for various DC-DC converters, such as buck and boost converters. Its low on-resistance and high current capability make it excellent in high-efficiency power conversion, especially in applications that require fast switching response, such as server power supplies and data center power management systems.
2. **Power Tools and Motor Drives**: This MOSFET can be used to drive motors and control high-current switches in power tools. Its high current handling capability (85A) and low conduction losses enable it to operate reliably in high-power motors and other heavy-load applications, reducing energy losses and improving overall system efficiency.
3. **Battery Management System (BMS)**: IRFU4104PBF-VB plays an important role in battery management systems, especially in battery switching and load management modules. Its low on-resistance helps reduce power losses in battery discharge, thereby extending battery life.
4. **Automotive Electronics**: This MOSFET can be used in power control, LED drive and motor control modules in automotive electronic systems. Its high current and low on-resistance characteristics can support efficient operation of automotive circuits, especially in low-voltage and high-current applications such as automotive chargers and motor drive controllers.
The wide application of IRFU4104PBF-VB makes it very popular in occasions that require efficient switching, high current handling capabilities and low conduction losses, such as industrial automation, power tools and power management.
1. **Power Management and Converters**: IRFU4104PBF-VB is suitable for various DC-DC converters, such as buck and boost converters. Its low on-resistance and high current capability make it excellent in high-efficiency power conversion, especially in applications that require fast switching response, such as server power supplies and data center power management systems.
2. **Power Tools and Motor Drives**: This MOSFET can be used to drive motors and control high-current switches in power tools. Its high current handling capability (85A) and low conduction losses enable it to operate reliably in high-power motors and other heavy-load applications, reducing energy losses and improving overall system efficiency.
3. **Battery Management System (BMS)**: IRFU4104PBF-VB plays an important role in battery management systems, especially in battery switching and load management modules. Its low on-resistance helps reduce power losses in battery discharge, thereby extending battery life.
4. **Automotive Electronics**: This MOSFET can be used in power control, LED drive and motor control modules in automotive electronic systems. Its high current and low on-resistance characteristics can support efficient operation of automotive circuits, especially in low-voltage and high-current applications such as automotive chargers and motor drive controllers.
The wide application of IRFU4104PBF-VB makes it very popular in occasions that require efficient switching, high current handling capabilities and low conduction losses, such as industrial automation, power tools and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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