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IRFU3910P-VB Product details
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IRFU3910P-VB MOSFET Product Introduction
**IRFU3910P-VB** is a high-performance N-Channel MOSFET in TO251 package with 100V drain-source withstand voltage (VDS) and up to 15A maximum drain current (ID). It uses advanced Trench technology to provide low on-state resistance (RDS(ON)), which is particularly suitable for high-efficiency power management and switching applications. IRFU3910P-VB is widely used in high current control and power conversion scenarios with its excellent conduction performance and reliability.
**IRFU3910P-VB** is a high-performance N-Channel MOSFET in TO251 package with 100V drain-source withstand voltage (VDS) and up to 15A maximum drain current (ID). It uses advanced Trench technology to provide low on-state resistance (RDS(ON)), which is particularly suitable for high-efficiency power management and switching applications. IRFU3910P-VB is widely used in high current control and power conversion scenarios with its excellent conduction performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
IRFU3910P-VB MOSFET Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-state resistance (RDS(ON))**:
- 110mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench technology
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-state resistance (RDS(ON))**:
- 110mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **DC-DC converter**:
IRFU3910P-VB is ideal for use in DC-DC converters, especially in circuits with high current demands. Its low RDS(ON) allows for higher efficiency, which reduces energy loss and improves the overall performance of the converter, making it suitable for notebook computers, battery-powered devices, and industrial power systems.
2. **Power management module**:
This MOSFET can be used in power management modules for efficient current regulation and voltage control. It is suitable for use in modules such as voltage regulators, power factor correction, and uninterruptible power supplies (UPS) to improve the stability and reliability of the power supply.
3. **Battery protection circuit**:
In the battery protection circuit, IRFU3910P-VB can effectively control the battery charging and discharging process to prevent overcurrent, overvoltage, etc. It is suitable for use in battery management systems for electric vehicles, power tools, and portable electronic devices.
4. **Load switch and relay driver**:
IRFU3910P-VB can be used in various load switches and relay drivers, especially in industrial automation systems and home appliance control, it can drive high current loads while ensuring low power loss and stable operation.
5. **Power amplifier**:
This MOSFET is also suitable for audio and RF power amplifiers. Its excellent switching speed and low on-resistance can improve the efficiency of the amplifier, reduce power loss, and ensure the stability and quality of audio output.
As a high-efficiency, low-loss MOSFET, IRFU3910P-VB is suitable for various power conversion, switching circuits and power regulation applications, and can provide excellent performance and reliability.
1. **DC-DC converter**:
IRFU3910P-VB is ideal for use in DC-DC converters, especially in circuits with high current demands. Its low RDS(ON) allows for higher efficiency, which reduces energy loss and improves the overall performance of the converter, making it suitable for notebook computers, battery-powered devices, and industrial power systems.
2. **Power management module**:
This MOSFET can be used in power management modules for efficient current regulation and voltage control. It is suitable for use in modules such as voltage regulators, power factor correction, and uninterruptible power supplies (UPS) to improve the stability and reliability of the power supply.
3. **Battery protection circuit**:
In the battery protection circuit, IRFU3910P-VB can effectively control the battery charging and discharging process to prevent overcurrent, overvoltage, etc. It is suitable for use in battery management systems for electric vehicles, power tools, and portable electronic devices.
4. **Load switch and relay driver**:
IRFU3910P-VB can be used in various load switches and relay drivers, especially in industrial automation systems and home appliance control, it can drive high current loads while ensuring low power loss and stable operation.
5. **Power amplifier**:
This MOSFET is also suitable for audio and RF power amplifiers. Its excellent switching speed and low on-resistance can improve the efficiency of the amplifier, reduce power loss, and ensure the stability and quality of audio output.
As a high-efficiency, low-loss MOSFET, IRFU3910P-VB is suitable for various power conversion, switching circuits and power regulation applications, and can provide excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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