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IRFU3708PBF-VB Product details
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Product Introduction
**IRFU3708PBF-VB** is a high-performance N-Channel MOSFET in TO251 package and uses advanced Trench technology. This MOSFET is designed to handle low to medium voltage applications, with a maximum drain-source voltage of 30V and a maximum drain current of up to 100A. The low on-resistance and low threshold voltage of IRFU3708PBF-VB make it excel in switch control systems that require high efficiency and high power, and is very suitable for high current switching applications.
**IRFU3708PBF-VB** is a high-performance N-Channel MOSFET in TO251 package and uses advanced Trench technology. This MOSFET is designed to handle low to medium voltage applications, with a maximum drain-source voltage of 30V and a maximum drain current of up to 100A. The low on-resistance and low threshold voltage of IRFU3708PBF-VB make it excel in switch control systems that require high efficiency and high power, and is very suitable for high current switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4.5mΩ @ VGS = 4.5V
- 3.5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4.5mΩ @ VGS = 4.5V
- 3.5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High current switching**: IRFU3708PBF-VB is suitable for high current switching applications, such as in high power DC-DC converters. Its low on-resistance ensures efficient power conversion and minimal energy loss, suitable for scenarios that require high current handling.
2. **Motor drive system**: In motor drive systems, this MOSFET is able to handle high currents and maintain low on-resistance, suitable for motor control in industrial motors and electric vehicles, ensuring the stability and reliability of the motor under high current operation.
3. **Battery management system**: IRFU3708PBF-VB In battery management systems, such as electric vehicles or energy storage systems, it can efficiently manage the charging and discharging process, optimize battery performance and improve system efficiency.
4. **High frequency switching circuit**: In high frequency switching applications, such as power modules for communication equipment, the high switching speed and low on-resistance of this MOSFET enable it to provide stable performance, suitable for high frequency switching operations.
The IRFU3708PBF-VB’s high current handling capability, low on-resistance and lower threshold voltage enable it to excel in multiple high power and high current applications, making it an ideal choice for handling high current loads and efficient power management.
1. **High current switching**: IRFU3708PBF-VB is suitable for high current switching applications, such as in high power DC-DC converters. Its low on-resistance ensures efficient power conversion and minimal energy loss, suitable for scenarios that require high current handling.
2. **Motor drive system**: In motor drive systems, this MOSFET is able to handle high currents and maintain low on-resistance, suitable for motor control in industrial motors and electric vehicles, ensuring the stability and reliability of the motor under high current operation.
3. **Battery management system**: IRFU3708PBF-VB In battery management systems, such as electric vehicles or energy storage systems, it can efficiently manage the charging and discharging process, optimize battery performance and improve system efficiency.
4. **High frequency switching circuit**: In high frequency switching applications, such as power modules for communication equipment, the high switching speed and low on-resistance of this MOSFET enable it to provide stable performance, suitable for high frequency switching operations.
The IRFU3708PBF-VB’s high current handling capability, low on-resistance and lower threshold voltage enable it to excel in multiple high power and high current applications, making it an ideal choice for handling high current loads and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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