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IRFU3607PBF-VB Product details
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Product Introduction
**IRFU3607PBF-VB** is a high-performance N-Channel MOSFET in TO251 package using Trench technology. This MOSFET is designed for medium voltage and high current applications, with extremely low on-resistance and excellent current handling capability. Its efficient switching performance and low power loss make it suitable for demanding power management and switching applications, providing stable and reliable performance in a variety of electrical equipment.
**IRFU3607PBF-VB** is a high-performance N-Channel MOSFET in TO251 package using Trench technology. This MOSFET is designed for medium voltage and high current applications, with extremely low on-resistance and excellent current handling capability. Its efficient switching performance and low power loss make it suitable for demanding power management and switching applications, providing stable and reliable performance in a variety of electrical equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IRFU3607PBF-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain to source voltage (VDS)**: 80V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 75A
- **Technology**: Trench
- **Model**: IRFU3607PBF-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain to source voltage (VDS)**: 80V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power converter**: The low on-resistance (especially 6.4mΩ at VGS=10V) and high current handling capability (75A) of the IRFU3607PBF-VB make it ideal for use in power converters. In these applications, it can effectively control current, reduce power losses, and improve the efficiency and stability of power conversion.
2. **Motor drive system**: In motor drive applications, the IRFU3607PBF-VB can effectively handle high current loads. Its low on-resistance and high current capability ensure the stability and efficiency of the motor during starting, running and stopping, making it an excellent performer in high current motor drive systems.
3. **Power amplifier**: The low on-resistance and high current handling capability of this MOSFET enable it to perform well in power amplifier circuits. It can be used as a switching element or driver to help reduce power losses and improve the overall efficiency of the power amplifier.
4. **Switching Power Supply**: IRFU3607PBF-VB performs well in switching power supply applications, especially in situations where medium voltage and high current need to be handled. Its high switching efficiency and low power loss make it suitable for high-efficiency power supply design, improving the reliability and performance of power conversion.
5. **LED Driver**: In LED drive circuits, IRFU3607PBF-VB's low on-resistance and high current capability make it suitable for high-current LED drive applications. It can effectively control the brightness and switching state of the LED while reducing energy loss, providing an efficient LED drive solution.
1. **Power converter**: The low on-resistance (especially 6.4mΩ at VGS=10V) and high current handling capability (75A) of the IRFU3607PBF-VB make it ideal for use in power converters. In these applications, it can effectively control current, reduce power losses, and improve the efficiency and stability of power conversion.
2. **Motor drive system**: In motor drive applications, the IRFU3607PBF-VB can effectively handle high current loads. Its low on-resistance and high current capability ensure the stability and efficiency of the motor during starting, running and stopping, making it an excellent performer in high current motor drive systems.
3. **Power amplifier**: The low on-resistance and high current handling capability of this MOSFET enable it to perform well in power amplifier circuits. It can be used as a switching element or driver to help reduce power losses and improve the overall efficiency of the power amplifier.
4. **Switching Power Supply**: IRFU3607PBF-VB performs well in switching power supply applications, especially in situations where medium voltage and high current need to be handled. Its high switching efficiency and low power loss make it suitable for high-efficiency power supply design, improving the reliability and performance of power conversion.
5. **LED Driver**: In LED drive circuits, IRFU3607PBF-VB's low on-resistance and high current capability make it suitable for high-current LED drive applications. It can effectively control the brightness and switching state of the LED while reducing energy loss, providing an efficient LED drive solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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