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IRFU3518PBF-VB Product details
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Product Introduction
**IRFU3518PBF-VB** is a high-performance N-channel MOSFET in TO251 package, manufactured using advanced Trench technology. Designed for medium voltage applications, this MOSFET can withstand drain-source voltages up to 80V and handle drain currents up to 75A. Its low on-resistance enables it to have excellent performance in switching and power control applications, and is suitable for electronic systems that require high performance and low power consumption.
**IRFU3518PBF-VB** is a high-performance N-channel MOSFET in TO251 package, manufactured using advanced Trench technology. Designed for medium voltage applications, this MOSFET can withstand drain-source voltages up to 80V and handle drain currents up to 75A. Its low on-resistance enables it to have excellent performance in switching and power control applications, and is suitable for electronic systems that require high performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IRFU3518PBF-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ (VGS = 4.5V)
- 6.4mΩ (VGS = 10V)
- **Drain current (ID)**: 75A
- **Technology**: Trench
- **Model**: IRFU3518PBF-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ (VGS = 4.5V)
- 6.4mΩ (VGS = 10V)
- **Drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The design and features of the **IRFU3518PBF-VB** make it ideal for the following areas and modules:
1. **Switching Power Supply**: In switching power supply design, the low on-resistance and high current handling capability of the IRFU3518PBF-VB make it very suitable as an efficient switching element. It can operate stably at 80V, improve power conversion efficiency and reduce energy loss, and is suitable for various power management and conversion applications.
2. **Motor Drive**: This MOSFET can be used as a switching element in motor drive applications to control the start, stop and operation of the motor. Its high current handling capability and low on-resistance make it suitable for industrial motor drive and automotive motor control, providing efficient motor control solutions.
3. **Power Amplifier**: In the power amplifier circuit, the IRFU3518PBF-VB can handle high power signals, ensuring high efficiency and stable performance of the amplifier. Its low on-resistance and high drain current capability make it excel in power amplifier design and suitable for applications requiring high power output.
4. **LED driving**: In LED driving circuits, IRFU3518PBF-VB can be used as a switching element to adjust the switching and brightness of LEDs. Its low on-resistance enables it to efficiently drive LEDs under low power consumption conditions, suitable for a variety of LED lighting applications, including indoor and outdoor lighting systems.
5. **Power management**: This MOSFET is also suitable for power management systems, including power switching, overcurrent protection, and power conversion. Its high current handling capability and low on-resistance enable it to provide stable power switching control and protection functions to ensure the reliability and efficiency of the power system.
These application areas require MOSFETs to operate stably under medium voltage and high current conditions, and the high efficiency characteristics of IRFU3518PBF-VB make it an ideal choice for these applications.
The design and features of the **IRFU3518PBF-VB** make it ideal for the following areas and modules:
1. **Switching Power Supply**: In switching power supply design, the low on-resistance and high current handling capability of the IRFU3518PBF-VB make it very suitable as an efficient switching element. It can operate stably at 80V, improve power conversion efficiency and reduce energy loss, and is suitable for various power management and conversion applications.
2. **Motor Drive**: This MOSFET can be used as a switching element in motor drive applications to control the start, stop and operation of the motor. Its high current handling capability and low on-resistance make it suitable for industrial motor drive and automotive motor control, providing efficient motor control solutions.
3. **Power Amplifier**: In the power amplifier circuit, the IRFU3518PBF-VB can handle high power signals, ensuring high efficiency and stable performance of the amplifier. Its low on-resistance and high drain current capability make it excel in power amplifier design and suitable for applications requiring high power output.
4. **LED driving**: In LED driving circuits, IRFU3518PBF-VB can be used as a switching element to adjust the switching and brightness of LEDs. Its low on-resistance enables it to efficiently drive LEDs under low power consumption conditions, suitable for a variety of LED lighting applications, including indoor and outdoor lighting systems.
5. **Power management**: This MOSFET is also suitable for power management systems, including power switching, overcurrent protection, and power conversion. Its high current handling capability and low on-resistance enable it to provide stable power switching control and protection functions to ensure the reliability and efficiency of the power system.
These application areas require MOSFETs to operate stably under medium voltage and high current conditions, and the high efficiency characteristics of IRFU3518PBF-VB make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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