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IRFU3504PBF-VB Product details
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IRFU3504PBF-VB MOSFET Product Introduction
**IRFU3504PBF-VB** is a high-performance N-Channel MOSFET in a TO251 package. The MOSFET has a drain-source withstand voltage (VDS) of 40V and a maximum drain current (ID) of up to 85A. It uses Trench technology to provide extremely low on-state resistance, making it excel in high current and high efficiency applications. The IRFU3504PBF-VB is designed for power management and switching applications that require high current and low power consumption.
**IRFU3504PBF-VB** is a high-performance N-Channel MOSFET in a TO251 package. The MOSFET has a drain-source withstand voltage (VDS) of 40V and a maximum drain current (ID) of up to 85A. It uses Trench technology to provide extremely low on-state resistance, making it excel in high current and high efficiency applications. The IRFU3504PBF-VB is designed for power management and switching applications that require high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
IRFU3504PBF-VB MOSFET Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 40V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-state resistance (RDS(ON))**:
- 6.5mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench technology
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 40V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-state resistance (RDS(ON))**:
- 6.5mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **DC-DC Converter**:
- In DC-DC converter applications, the low RDS(ON) and high current capability of the IRFU3504PBF-VB enables efficient voltage conversion, reduces power consumption, and improves system efficiency. It is suitable for power conversion and voltage regulation modules.
2. **Motor Drive**:
- This MOSFET can be used in motor drive systems for high current loads. Its high current handling capability and low on-state resistance make it ideal for power tools, electric vehicles, and industrial motor drives.
3. **Power Amplifier**:
- In power amplifier applications, the high current and low power loss characteristics of the IRFU3504PBF-VB can improve the performance of the amplifier. It is suitable for audio amplifiers and RF amplifiers to improve the power output and efficiency of the system.
4. **Battery Management System**:
- In the battery management system, this MOSFET can effectively control the battery charge and discharge process, suitable for battery protection and battery pack balancing applications. It can prevent overcurrent and overvoltage, ensuring the safety and stability of the battery.
5. **High-efficiency power module**:
- In the high-efficiency power module, the low RDS(ON) and high current capability of IRFU3504PBF-VB make it suitable for power conversion and power distribution, improving the overall performance and efficiency of the module.
IRFU3504PBF-VB is a high current and low power MOSFET, which is widely used in various power management and switching systems due to its superior switching performance and reliability.
1. **DC-DC Converter**:
- In DC-DC converter applications, the low RDS(ON) and high current capability of the IRFU3504PBF-VB enables efficient voltage conversion, reduces power consumption, and improves system efficiency. It is suitable for power conversion and voltage regulation modules.
2. **Motor Drive**:
- This MOSFET can be used in motor drive systems for high current loads. Its high current handling capability and low on-state resistance make it ideal for power tools, electric vehicles, and industrial motor drives.
3. **Power Amplifier**:
- In power amplifier applications, the high current and low power loss characteristics of the IRFU3504PBF-VB can improve the performance of the amplifier. It is suitable for audio amplifiers and RF amplifiers to improve the power output and efficiency of the system.
4. **Battery Management System**:
- In the battery management system, this MOSFET can effectively control the battery charge and discharge process, suitable for battery protection and battery pack balancing applications. It can prevent overcurrent and overvoltage, ensuring the safety and stability of the battery.
5. **High-efficiency power module**:
- In the high-efficiency power module, the low RDS(ON) and high current capability of IRFU3504PBF-VB make it suitable for power conversion and power distribution, improving the overall performance and efficiency of the module.
IRFU3504PBF-VB is a high current and low power MOSFET, which is widely used in various power management and switching systems due to its superior switching performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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