IRFU3418PBF-VB Product details
Product introduction:
**IRFU3418PBF-VB** is a high-performance N-channel MOSFET packaged in TO251. It uses advanced Trench technology and is designed to handle medium voltage and high current applications. This MOSFET has a drain-source withstand voltage of 80V and a gate-source withstand voltage of 20V, suitable for switching operations in medium voltage environments. The gate threshold voltage of IRFU3418PBF-VB is 3V, allowing it to start at a lower gate voltage. Its on-resistance is 8.7mΩ at VGS=4.5V and 6.4mΩ at VGS=10V. It can handle a drain current of up to 75A and is very suitable for applications requiring high current and high switching efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: IRFU3418PBF-VB
- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **Drain-source withstand voltage (VDS)**: 80V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ (at VGS=4.5V)
- 6.4mΩ (at VGS=10V)
- **Drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications:
1. **High current switching power supply**:
IRFU3418PBF-VB is particularly suitable for high current switching power supplies, such as high power DC-DC converters and power management systems. Its low on-resistance and high current capability enable it to switch efficiently in high current environments, reduce power losses, and improve system efficiency.
2. **Motor drive system**:
In motor control and drive applications, this MOSFET can be used to control the start, stop, and speed regulation of the motor. Its high current capability and low on-resistance make it suitable for medium power motor drive systems, providing stable and efficient switching control.
3. **Power regulation module**:
IRFU3418PBF-VB is suitable for power regulation modules, such as power regulation and conversion circuits. Its high current handling capability and low on-resistance ensure high efficiency in the power regulation process, and is suitable for applications requiring high current and high switching efficiency.
4. **Power protection circuit**:
In the power protection circuit, this MOSFET can be used as a switching element for overcurrent protection and power management. Its high current handling capability and low on-resistance help to quickly cut off the circuit when the power fails, protecting the circuit and other components from overcurrent damage.
5. **Automotive electronics**:
In automotive electronic systems, IRFU3418PBF-VB can provide stable switching functions, especially in applications that need to handle medium voltage and high current, such as automotive power management and electric vehicle drive systems. Its high current capability and low on-resistance ensure reliability and high efficiency in automotive environments.
With its high current capability and low on-resistance, IRFU3418PBF-VB has demonstrated excellent performance in applications such as high-current switching power supplies, motor drives, power conditioning, power protection, and automotive electronics, ensuring efficient operation and reliability of the system.
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