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IRFU3412PBF-VB Product details
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Product Introduction
**IRFU3412PBF-VB** is a high-performance N-Channel MOSFET in TO251 package. This MOSFET adopts Trench technology and is designed to handle medium voltage and high current applications. It has a drain-source voltage of up to 100V and a maximum drain current of 50A, suitable for switching operations in high-power applications. The low on-resistance and low threshold voltage of IRFU3412PBF-VB make it excellent in power management and switch control systems that require high efficiency and stability.
**IRFU3412PBF-VB** is a high-performance N-Channel MOSFET in TO251 package. This MOSFET adopts Trench technology and is designed to handle medium voltage and high current applications. It has a drain-source voltage of up to 100V and a maximum drain current of 50A, suitable for switching operations in high-power applications. The low on-resistance and low threshold voltage of IRFU3412PBF-VB make it excellent in power management and switch control systems that require high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 50A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 19mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 19mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power switch**: IRFU3412PBF-VB is suitable for high-power power switch applications. Its low on-resistance and high current carrying capacity make it an excellent performer in DC-DC converters and other power management modules, which can effectively reduce power loss and improve efficiency.
2. **Motor drive system**: In motor control and drive systems, this MOSFET can be used as a high-current switching element, suitable for use in the drive circuits of industrial motors and automation equipment, ensuring the stable operation of motors under high current and high voltage conditions.
3. **High-frequency switching applications**: IRFU3412PBF-VB is also widely used in high-frequency switching circuits, such as in the power management modules of communication equipment, which can provide stable and efficient switching operations to ensure high-performance operation of the equipment.
4. **Battery management**: In battery management systems, such as the battery management module of electric vehicles, IRFU3412PBF-VB can handle high-current charging and discharging processes, effectively improving the performance and life of the battery.
The high current carrying capability, low on-resistance and high drain-source voltage of the IRFU3412PBF-VB enable it to excel in multiple high-power and high-current applications, meeting the requirements of modern electronic devices for high efficiency and stability.
1. **Power switch**: IRFU3412PBF-VB is suitable for high-power power switch applications. Its low on-resistance and high current carrying capacity make it an excellent performer in DC-DC converters and other power management modules, which can effectively reduce power loss and improve efficiency.
2. **Motor drive system**: In motor control and drive systems, this MOSFET can be used as a high-current switching element, suitable for use in the drive circuits of industrial motors and automation equipment, ensuring the stable operation of motors under high current and high voltage conditions.
3. **High-frequency switching applications**: IRFU3412PBF-VB is also widely used in high-frequency switching circuits, such as in the power management modules of communication equipment, which can provide stable and efficient switching operations to ensure high-performance operation of the equipment.
4. **Battery management**: In battery management systems, such as the battery management module of electric vehicles, IRFU3412PBF-VB can handle high-current charging and discharging processes, effectively improving the performance and life of the battery.
The high current carrying capability, low on-resistance and high drain-source voltage of the IRFU3412PBF-VB enable it to excel in multiple high-power and high-current applications, meeting the requirements of modern electronic devices for high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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