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IRFU3411PBF-VB Product details
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IRFU3411PBF-VB Product Introduction
IRFU3411PBF-VB is a high-performance N-Channel MOSFET in TO251 package. It is designed for applications requiring high current and low on-resistance, with a maximum drain-source voltage (VDS) of 100V. The maximum gate-source voltage (VGS) of this MOSFET is ±20V, and the threshold voltage (Vth) is 1.8V. IRFU3411PBF-VB uses Trench technology, has a very low on-resistance (RDS(ON)) of 36mΩ@VGS=10V, and can handle a maximum drain current (ID) of 35A. These features give it excellent performance and efficiency in high current applications.
IRFU3411PBF-VB is a high-performance N-Channel MOSFET in TO251 package. It is designed for applications requiring high current and low on-resistance, with a maximum drain-source voltage (VDS) of 100V. The maximum gate-source voltage (VGS) of this MOSFET is ±20V, and the threshold voltage (Vth) is 1.8V. IRFU3411PBF-VB uses Trench technology, has a very low on-resistance (RDS(ON)) of 36mΩ@VGS=10V, and can handle a maximum drain current (ID) of 35A. These features give it excellent performance and efficiency in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IRFU3411PBF-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ@VGS=10V
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
- **Model**: IRFU3411PBF-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ@VGS=10V
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The high current handling capability and low on-resistance of the IRFU3411PBF-VB make it suitable for the following applications:
1. **Power Management**: In power management systems, such as DC-DC converters and power modules, the IRFU3411PBF-VB can be used as a switching element. Its low on-resistance helps reduce power loss and improve conversion efficiency, while supporting currents up to 35A to meet the needs of high-power applications.
2. **Electric Vehicle (EV) Drive Systems**: In the motor drive systems of electric vehicles, the IRFU3411PBF-VB is able to effectively handle the high current demands in the motor drive circuits. Its high current capability and low on-resistance make it ideal for motor control and power management in electric vehicles, improving overall system efficiency and reliability.
3. **Industrial Power Control**: In industrial power control systems, especially in high-power devices and switching circuits, the IRFU3411PBF-VB can be used as the main switching element. Its excellent on-resistance and high current carrying capacity ensure efficient operation and stability of the system, suitable for various industrial power applications.
4. **Battery Management System**: In the battery management system, the low on-resistance and high current capability of IRFU3411PBF-VB make it suitable for controlling the charging and discharging process of the battery. It can help improve the charging efficiency and discharge performance of the battery system while providing good protection and management functions.
These application scenarios demonstrate the wide applicability of IRFU3411PBF-VB in electronic systems that require high current handling and low on-resistance.
The high current handling capability and low on-resistance of the IRFU3411PBF-VB make it suitable for the following applications:
1. **Power Management**: In power management systems, such as DC-DC converters and power modules, the IRFU3411PBF-VB can be used as a switching element. Its low on-resistance helps reduce power loss and improve conversion efficiency, while supporting currents up to 35A to meet the needs of high-power applications.
2. **Electric Vehicle (EV) Drive Systems**: In the motor drive systems of electric vehicles, the IRFU3411PBF-VB is able to effectively handle the high current demands in the motor drive circuits. Its high current capability and low on-resistance make it ideal for motor control and power management in electric vehicles, improving overall system efficiency and reliability.
3. **Industrial Power Control**: In industrial power control systems, especially in high-power devices and switching circuits, the IRFU3411PBF-VB can be used as the main switching element. Its excellent on-resistance and high current carrying capacity ensure efficient operation and stability of the system, suitable for various industrial power applications.
4. **Battery Management System**: In the battery management system, the low on-resistance and high current capability of IRFU3411PBF-VB make it suitable for controlling the charging and discharging process of the battery. It can help improve the charging efficiency and discharge performance of the battery system while providing good protection and management functions.
These application scenarios demonstrate the wide applicability of IRFU3411PBF-VB in electronic systems that require high current handling and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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