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IRFU3410P-VB Product details
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Product Introduction
**IRFU3410P-VB** is a high-performance N-Channel MOSFET with TO251 package and Trench technology. It is designed for medium voltage and high current applications, with excellent on-resistance and high current handling capability. This MOSFET is suitable for use in a variety of power management and switching applications, and can provide stable and efficient performance in high current and medium voltage working environments.
**IRFU3410P-VB** is a high-performance N-Channel MOSFET with TO251 package and Trench technology. It is designed for medium voltage and high current applications, with excellent on-resistance and high current handling capability. This MOSFET is suitable for use in a variety of power management and switching applications, and can provide stable and efficient performance in high current and medium voltage working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IRFU3410P-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain to source voltage (VDS)**: 100V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 35A
- **Technology**: Trench
- **Model**: IRFU3410P-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain to source voltage (VDS)**: 100V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 35A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power converter**: The low on-resistance (36mΩ) and high current handling capability of the IRFU3410P-VB make it ideal for use in power converters. In these applications, it can effectively control the current flow, reduce power losses, and improve the overall efficiency of power conversion.
2. **Motor drive system**: In motor drive applications, the high current handling capability (35A) and stable switching performance of the IRFU3410P-VB make it suitable as a switching element for the motor. It can effectively control the motor during start, run and stop, ensuring the reliability and efficiency of the motor drive system.
3. **Power amplifier**: The low on-resistance and high current handling capability of this MOSFET make it an excellent performer in power amplifiers. It can be used as a switching element or driver, helping to reduce power losses and improve the overall performance of the power amplifier.
4. **Switching power supply**: In switching power supply applications, the IRFU3410P-VB provides good switching performance and high current handling capability. It is suitable for power supply design in the medium voltage range and can improve the efficiency and reliability of power conversion.
5. **LED driver**: IRFU3410P-VB can be used in LED driver circuits, especially in applications requiring high current. Its low on-resistance and high current capability ensure efficient driving and brightness control of LEDs while reducing energy loss.
1. **Power converter**: The low on-resistance (36mΩ) and high current handling capability of the IRFU3410P-VB make it ideal for use in power converters. In these applications, it can effectively control the current flow, reduce power losses, and improve the overall efficiency of power conversion.
2. **Motor drive system**: In motor drive applications, the high current handling capability (35A) and stable switching performance of the IRFU3410P-VB make it suitable as a switching element for the motor. It can effectively control the motor during start, run and stop, ensuring the reliability and efficiency of the motor drive system.
3. **Power amplifier**: The low on-resistance and high current handling capability of this MOSFET make it an excellent performer in power amplifiers. It can be used as a switching element or driver, helping to reduce power losses and improve the overall performance of the power amplifier.
4. **Switching power supply**: In switching power supply applications, the IRFU3410P-VB provides good switching performance and high current handling capability. It is suitable for power supply design in the medium voltage range and can improve the efficiency and reliability of power conversion.
5. **LED driver**: IRFU3410P-VB can be used in LED driver circuits, especially in applications requiring high current. Its low on-resistance and high current capability ensure efficient driving and brightness control of LEDs while reducing energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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