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IRFU3410PBF-VB Product details
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Product Introduction
**IRFU3410PBF-VB** is a high-performance N-channel MOSFET in a TO251 package and manufactured using advanced Trench technology. Designed for medium voltage applications, this MOSFET is capable of withstanding drain-source voltages up to 100V and handling drain currents up to 35A. Its low on-resistance and low gate threshold voltage make it ideal for high-efficiency switching and power control applications, providing stable performance and efficient power conversion.
**IRFU3410PBF-VB** is a high-performance N-channel MOSFET in a TO251 package and manufactured using advanced Trench technology. Designed for medium voltage applications, this MOSFET is capable of withstanding drain-source voltages up to 100V and handling drain currents up to 35A. Its low on-resistance and low gate threshold voltage make it ideal for high-efficiency switching and power control applications, providing stable performance and efficient power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IRFU3410PBF-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ (VGS = 10V)
- **Drain current (ID)**: 35A
- **Technology**: Trench
- **Model**: IRFU3410PBF-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 36mΩ (VGS = 10V)
- **Drain current (ID)**: 35A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The design and features of the **IRFU3410PBF-VB** make it suitable for the following areas and modules:
1. **Switching Power Supply**: In switching power supply design, the low on-resistance and high drain current handling capability of the IRFU3410PBF-VB make it very suitable as a switching element. It can efficiently convert power at 100V, improve power efficiency and reduce power consumption, and is suitable for various power management and power conversion applications.
2. **Motor Drive**: This MOSFET can be used as a switching element in motor drive applications to control the start, stop and running state of the motor. Its high current handling capability and low on-resistance make it suitable for high-efficiency motor control systems, including industrial motor drives and automotive motor controls.
3. **Power Amplifier**: In power amplifier circuits, the IRFU3410PBF-VB can handle high-power signals, ensuring high efficiency and stability of the amplifier. Its low on-resistance and high current capability make it suitable for amplifier designs that require high power output.
4. **LED drive**: In LED drive circuits, IRFU3410PBF-VB can be used as a switching element to adjust the switching and brightness of LEDs. Its low on-resistance enables it to efficiently drive LEDs under low power consumption conditions, suitable for various LED lighting applications such as indoor lighting and display screen driving.
5. **Power management**: This MOSFET is also suitable for power management systems, including power switching, overcurrent protection, and power conversion. Its high current handling capability and low on-resistance enable it to provide stable switching control and protection functions to ensure the reliability and efficiency of the power system.
These application areas require MOSFETs to operate stably under medium voltage and high current conditions, and the characteristics of IRFU3410PBF-VB enable it to perform well in these applications, providing efficient and reliable solutions.
The design and features of the **IRFU3410PBF-VB** make it suitable for the following areas and modules:
1. **Switching Power Supply**: In switching power supply design, the low on-resistance and high drain current handling capability of the IRFU3410PBF-VB make it very suitable as a switching element. It can efficiently convert power at 100V, improve power efficiency and reduce power consumption, and is suitable for various power management and power conversion applications.
2. **Motor Drive**: This MOSFET can be used as a switching element in motor drive applications to control the start, stop and running state of the motor. Its high current handling capability and low on-resistance make it suitable for high-efficiency motor control systems, including industrial motor drives and automotive motor controls.
3. **Power Amplifier**: In power amplifier circuits, the IRFU3410PBF-VB can handle high-power signals, ensuring high efficiency and stability of the amplifier. Its low on-resistance and high current capability make it suitable for amplifier designs that require high power output.
4. **LED drive**: In LED drive circuits, IRFU3410PBF-VB can be used as a switching element to adjust the switching and brightness of LEDs. Its low on-resistance enables it to efficiently drive LEDs under low power consumption conditions, suitable for various LED lighting applications such as indoor lighting and display screen driving.
5. **Power management**: This MOSFET is also suitable for power management systems, including power switching, overcurrent protection, and power conversion. Its high current handling capability and low on-resistance enable it to provide stable switching control and protection functions to ensure the reliability and efficiency of the power system.
These application areas require MOSFETs to operate stably under medium voltage and high current conditions, and the characteristics of IRFU3410PBF-VB enable it to perform well in these applications, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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