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IRFU2908PBF-VB Product details
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IRFU2908PBF-VB MOSFET Product Introduction
**IRFU2908PBF-VB** is a high-performance N-Channel MOSFET in TO251 package. It has a drain-source withstand voltage (VDS) of 80V and a maximum drain current (ID) of up to 75A. This MOSFET uses Trench technology to achieve extremely low on-state resistance and provide excellent switching performance. IRFU2908PBF-VB is particularly suitable for applications requiring high current and high efficiency.
**IRFU2908PBF-VB** is a high-performance N-Channel MOSFET in TO251 package. It has a drain-source withstand voltage (VDS) of 80V and a maximum drain current (ID) of up to 75A. This MOSFET uses Trench technology to achieve extremely low on-state resistance and provide excellent switching performance. IRFU2908PBF-VB is particularly suitable for applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
IRFU2908PBF-VB MOSFET Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 80V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-state resistance (RDS(ON))**:
- 8.7mΩ @ VGS = 4.5V
- 6.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 75A
- **Technology**: Trench technology
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 80V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-state resistance (RDS(ON))**:
- 8.7mΩ @ VGS = 4.5V
- 6.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Switching Power Supply**:
- In switching power supply systems, the low RDS(ON) and high current capability of IRFU2908PBF-VB enables it to efficiently convert and manage power. It is suitable for use in high-efficiency power conversion and power management modules, providing stable current and voltage output.
2. **Motor Control**:
- This MOSFET can be used in high-current motor control systems. Its high current handling capability and low on-state resistance make it suitable for driving power tools, electric vehicles, and industrial motors for efficient motor drive and control.
3. **Power Amplifier**:
- In power amplifier applications, the high current handling capability and low RDS(ON) of IRFU2908PBF-VB improve the efficiency and power output of the amplifier. It is suitable for audio amplifiers and RF amplifiers to enhance amplification performance.
4. **Battery Management System**:
- Used in battery management systems, this MOSFET can effectively control the battery charge and discharge process to prevent overcurrent and overvoltage. It is suitable for use in battery protection and battery balancing systems to ensure battery safety and performance.
5. **High-efficiency power module**:
- In high-efficiency power modules, IRFU2908PBF-VB provides high current and low power loss, suitable for power conversion and power distribution systems, improving the overall performance and efficiency of the module.
IRFU2908PBF-VB is a MOSFET designed for high current and high efficiency. Its superior performance and reliability make it outstanding in various power management and switching applications.
1. **Switching Power Supply**:
- In switching power supply systems, the low RDS(ON) and high current capability of IRFU2908PBF-VB enables it to efficiently convert and manage power. It is suitable for use in high-efficiency power conversion and power management modules, providing stable current and voltage output.
2. **Motor Control**:
- This MOSFET can be used in high-current motor control systems. Its high current handling capability and low on-state resistance make it suitable for driving power tools, electric vehicles, and industrial motors for efficient motor drive and control.
3. **Power Amplifier**:
- In power amplifier applications, the high current handling capability and low RDS(ON) of IRFU2908PBF-VB improve the efficiency and power output of the amplifier. It is suitable for audio amplifiers and RF amplifiers to enhance amplification performance.
4. **Battery Management System**:
- Used in battery management systems, this MOSFET can effectively control the battery charge and discharge process to prevent overcurrent and overvoltage. It is suitable for use in battery protection and battery balancing systems to ensure battery safety and performance.
5. **High-efficiency power module**:
- In high-efficiency power modules, IRFU2908PBF-VB provides high current and low power loss, suitable for power conversion and power distribution systems, improving the overall performance and efficiency of the module.
IRFU2908PBF-VB is a MOSFET designed for high current and high efficiency. Its superior performance and reliability make it outstanding in various power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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