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IRFU1N60A-VB Product details
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Product Introduction
**IRFU1N60A-VB** is a high voltage N-channel MOSFET in TO251 package, manufactured using Plannar technology. This MOSFET is designed for high voltage applications, can withstand drain-source voltages up to 650V, and has a high gate-source voltage tolerance (±30V). IRFU1N60A-VB has a high on-resistance, but can operate stably under 2A drain current conditions, making it suitable for use in high voltage switching and power control applications.
**IRFU1N60A-VB** is a high voltage N-channel MOSFET in TO251 package, manufactured using Plannar technology. This MOSFET is designed for high voltage applications, can withstand drain-source voltages up to 650V, and has a high gate-source voltage tolerance (±30V). IRFU1N60A-VB has a high on-resistance, but can operate stably under 2A drain current conditions, making it suitable for use in high voltage switching and power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: IRFU1N60A-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ (VGS = 10V)
- **Drain current (ID)**: 2A
- **Technology**: Plannar
- **Model**: IRFU1N60A-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ (VGS = 10V)
- **Drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
Application fields and modules
**IRFU1N60A-VB** is mainly suitable for the following fields and modules:
1. **High voltage switching power supply**: In high voltage switching power supply design, IRFU1N60A-VB can be used as a switching element to handle voltages up to 650V. Although its on-resistance is high, its high voltage withstand capability makes it suitable for power conversion and control applications that require high voltage switching.
2. **Power inverter**: This MOSFET can be used in power inverters, especially for high voltage DC to AC conversion. It is able to handle the switching operation during high voltage inversion, ensuring the stability and reliability of the inverter.
3. **High voltage protection circuit**: In high voltage protection circuits, IRFU1N60A-VB can be used as an overvoltage protection and switch control element. Its high voltage withstand capability enables it to effectively cope with high voltage conditions in protection circuits and protect other circuit components from damage.
4. **Motor drive**: Despite its high on-resistance, the IRFU1N60A-VB’s high voltage handling capability makes it suitable for use in high-voltage motor drive systems to control the start-up and operation of high-voltage motors.
5. **Lighting control**: In high-voltage lighting control systems, the IRFU1N60A-VB can be used as a switching element for the control of high-voltage lighting. Its high withstand voltage characteristics allow it to operate stably in high-voltage lighting applications.
These application areas require stable operation under high voltage conditions, and the IRFU1N60A-VB’s high voltage tolerance makes it perform well in these applications. Despite its high on-resistance, its high voltage capability makes it still a suitable choice in specific high-voltage applications.
**IRFU1N60A-VB** is mainly suitable for the following fields and modules:
1. **High voltage switching power supply**: In high voltage switching power supply design, IRFU1N60A-VB can be used as a switching element to handle voltages up to 650V. Although its on-resistance is high, its high voltage withstand capability makes it suitable for power conversion and control applications that require high voltage switching.
2. **Power inverter**: This MOSFET can be used in power inverters, especially for high voltage DC to AC conversion. It is able to handle the switching operation during high voltage inversion, ensuring the stability and reliability of the inverter.
3. **High voltage protection circuit**: In high voltage protection circuits, IRFU1N60A-VB can be used as an overvoltage protection and switch control element. Its high voltage withstand capability enables it to effectively cope with high voltage conditions in protection circuits and protect other circuit components from damage.
4. **Motor drive**: Despite its high on-resistance, the IRFU1N60A-VB’s high voltage handling capability makes it suitable for use in high-voltage motor drive systems to control the start-up and operation of high-voltage motors.
5. **Lighting control**: In high-voltage lighting control systems, the IRFU1N60A-VB can be used as a switching element for the control of high-voltage lighting. Its high withstand voltage characteristics allow it to operate stably in high-voltage lighting applications.
These application areas require stable operation under high voltage conditions, and the IRFU1N60A-VB’s high voltage tolerance makes it perform well in these applications. Despite its high on-resistance, its high voltage capability makes it still a suitable choice in specific high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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