IRFU13N20DPBF-VB Product details
Product introduction:
**IRFU13N20DPBF-VB** is a high-performance N-channel MOSFET packaged in TO251. It uses advanced Trench technology and is designed for applications that require high voltage and high current handling capabilities. With a drain-source withstand voltage of 200V and a gate-source withstand voltage of 20V, this MOSFET can withstand operation under high voltage conditions. The gate threshold voltage of IRFU13N20DPBF-VB is 3V, enabling it to start at a moderate gate voltage. Its on-resistance is 56mΩ at VGS=10V, and it can handle a drain current of up to 25A, making it ideal for high voltage and high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 25A | 56mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: IRFU13N20DPBF-VB
- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 56mΩ (at VGS=10V)
- **Drain current (ID)**: 25A
- **Technology**: Trench technology
Domain and module applications:
1. **High voltage switching power supply**:
IRFU13N20DPBF-VB is ideal for high voltage switching power supplies, such as high voltage DC-DC converters and power management systems. Its high drain-source withstand voltage and low on-resistance enable it to efficiently handle current at high voltage, ensuring stability and efficiency of the power conversion process.
2. **Motor drive system**:
In motor drive applications, this MOSFET can effectively control the start, stop and speed regulation of the motor. Its high current capability and high voltage withstand characteristics make it suitable for high power motor drive systems, providing stable switching control during motor operation.
3. **Power regulation module**:
IRFU13N20DPBF-VB is suitable for power regulation modules, such as power conversion and regulation circuits. Its high current handling capability and low on-resistance enable it to achieve precise power regulation and stable operation in high power applications.
4. **Power protection circuit**:
In the power protection circuit, this MOSFET can be used as a switching element for power protection. Its high voltage resistance and high current handling capabilities ensure that the circuit can be quickly cut off in the event of overvoltage or overcurrent, protecting other components from damage.
5. **Automotive electronics**:
In automotive electronic systems, especially high voltage and high power applications such as automotive power management systems and electric vehicle drive systems, IRFU13N20DPBF-VB can provide reliable switching functions. Its high voltage and high current resistance characteristics enable it to operate stably in the automotive environment, ensuring the reliability and safety of the system.
With its high voltage tolerance and low on-resistance, IRFU13N20DPBF-VB has demonstrated excellent performance in applications such as high voltage switching power supplies, motor drives, power conditioning, power protection and automotive electronics, ensuring efficient operation and reliability of the system.
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