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IRFU12N25DPBF-VB Product details
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Product Introduction
**IRFU12N25DPBF-VB** is a high voltage N-Channel MOSFET in TO251 package. This MOSFET uses advanced Trench technology and is designed to handle high voltage and medium current applications. Its maximum drain-source voltage is up to 250V, suitable for use in power supply and switch control applications that require high voltage resistance. Although its on-resistance is relatively high, this MOSFET performs well within its voltage resistance range and can provide reliable performance in a variety of high voltage applications.
**IRFU12N25DPBF-VB** is a high voltage N-Channel MOSFET in TO251 package. This MOSFET uses advanced Trench technology and is designed to handle high voltage and medium current applications. Its maximum drain-source voltage is up to 250V, suitable for use in power supply and switch control applications that require high voltage resistance. Although its on-resistance is relatively high, this MOSFET performs well within its voltage resistance range and can provide reliable performance in a variety of high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 176mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 17A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 176mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 17A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High-voltage power switch**: IRFU12N25DPBF-VB is suitable for high-voltage power switch applications, such as high-voltage DC-DC converters and inverters. Its high drain-source voltage capability enables it to handle switching operations under high voltage conditions, ensuring the stability and reliability of the system.
2. **Industrial power system**: In industrial power systems, this MOSFET can be used as a high-voltage switch, such as in power management modules, to control current flow and improve power conversion efficiency.
3. **Electrical control system**: In electrical control systems that require high voltage and high withstand voltage, such as motor control and electrical relay applications, IRFU12N25DPBF-VB provides reliable switching performance and is suitable for switching and controlling electrical loads.
4. **Power electronic equipment**: In power electronic equipment, such as high-voltage power supplies and battery management systems, this MOSFET can withstand high voltage conditions to ensure efficient operation and stability of the power system.
The high voltage withstand characteristics and medium current capability of the IRFU12N25DPBF-VB make it an ideal choice for applications requiring high voltage carrying capability, and it performs well in multiple high voltage scenarios.
1. **High-voltage power switch**: IRFU12N25DPBF-VB is suitable for high-voltage power switch applications, such as high-voltage DC-DC converters and inverters. Its high drain-source voltage capability enables it to handle switching operations under high voltage conditions, ensuring the stability and reliability of the system.
2. **Industrial power system**: In industrial power systems, this MOSFET can be used as a high-voltage switch, such as in power management modules, to control current flow and improve power conversion efficiency.
3. **Electrical control system**: In electrical control systems that require high voltage and high withstand voltage, such as motor control and electrical relay applications, IRFU12N25DPBF-VB provides reliable switching performance and is suitable for switching and controlling electrical loads.
4. **Power electronic equipment**: In power electronic equipment, such as high-voltage power supplies and battery management systems, this MOSFET can withstand high voltage conditions to ensure efficient operation and stability of the power system.
The high voltage withstand characteristics and medium current capability of the IRFU12N25DPBF-VB make it an ideal choice for applications requiring high voltage carrying capability, and it performs well in multiple high voltage scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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