中文
English
IRFU1205PBF-VB Product details
Back to previous pageProduct introduction：
IRFU1205PBF-VB Product Introduction
**IRFU1205PBF-VB** is a high-performance N-Channel MOSFET in TO251 package based on advanced Trench technology. This MOSFET offers a drain-source withstand voltage of up to 60V, suitable for medium voltage switching and power management applications. Its low on-resistance (32mΩ @ VGS = 10V) and high current handling capability (35A) make it outstanding in high-efficiency applications. Designed to improve switching efficiency and reduce energy loss, the IRFU1205PBF-VB is ideal for a variety of power supplies and power control systems.
**IRFU1205PBF-VB** is a high-performance N-Channel MOSFET in TO251 package based on advanced Trench technology. This MOSFET offers a drain-source withstand voltage of up to 60V, suitable for medium voltage switching and power management applications. Its low on-resistance (32mΩ @ VGS = 10V) and high current handling capability (35A) make it outstanding in high-efficiency applications. Designed to improve switching efficiency and reduce energy loss, the IRFU1205PBF-VB is ideal for a variety of power supplies and power control systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 35A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 37mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 37mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 35A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: The low on-resistance and high current handling capability of IRFU1205PBF-VB make it very suitable for use as the main switching element in a switching power supply (SMPS). It can effectively reduce energy loss and improve power conversion efficiency, especially in power management systems that require medium voltage.
2. **Motor control**: In motor drive applications, the high current capability and low on-resistance of IRFU1205PBF-VB make it suitable for use as a switching element in motor control circuits. This enables stable operation under high load conditions and is suitable for motor drive systems of industrial motors and household appliances.
3. **DC-DC converter**: This MOSFET also performs well in DC-DC converter applications. Its low on-resistance reduces energy losses during the conversion process, while its high current handling capability is suitable for high-efficiency voltage conversion and current regulation tasks.
4. **Power Amplifier**: In power amplifier applications, the high current handling capability and low on-resistance of IRFU1205PBF-VB enable stable operation under high power output conditions, suitable for power amplifier design in broadcast and communication systems.
These areas demonstrate the wide applicability of IRFU1205PBF-VB in medium voltage and high current switching applications, especially in power management systems that require high efficiency and stability.
1. **Switching power supply**: The low on-resistance and high current handling capability of IRFU1205PBF-VB make it very suitable for use as the main switching element in a switching power supply (SMPS). It can effectively reduce energy loss and improve power conversion efficiency, especially in power management systems that require medium voltage.
2. **Motor control**: In motor drive applications, the high current capability and low on-resistance of IRFU1205PBF-VB make it suitable for use as a switching element in motor control circuits. This enables stable operation under high load conditions and is suitable for motor drive systems of industrial motors and household appliances.
3. **DC-DC converter**: This MOSFET also performs well in DC-DC converter applications. Its low on-resistance reduces energy losses during the conversion process, while its high current handling capability is suitable for high-efficiency voltage conversion and current regulation tasks.
4. **Power Amplifier**: In power amplifier applications, the high current handling capability and low on-resistance of IRFU1205PBF-VB enable stable operation under high power output conditions, suitable for power amplifier design in broadcast and communication systems.
These areas demonstrate the wide applicability of IRFU1205PBF-VB in medium voltage and high current switching applications, especially in power management systems that require high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
