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IRFU110PBF-VB Product details
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IRFU110PBF-VB Product Introduction
**IRFU110PBF-VB** is a high-performance N-channel MOSFET in TO251 package. It uses Trench technology, has low on-resistance and excellent switching performance, and is suitable for handling medium current and medium voltage applications. This MOSFET is designed for power management and load switching circuits that require efficient switching control and can provide reliable performance in high voltage environments.
**IRFU110PBF-VB** is a high-performance N-channel MOSFET in TO251 package. It uses Trench technology, has low on-resistance and excellent switching performance, and is suitable for handling medium current and medium voltage applications. This MOSFET is designed for power management and load switching circuits that require efficient switching control and can provide reliable performance in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.5V | 12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.5V | 12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.5V | 12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**: 200mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 12A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**: 200mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 12A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**:
- **Application**: IRFU110PBF-VB is suitable for switch control in power management systems, especially in situations where medium current and voltage are required. Its low on-resistance helps reduce power consumption and improve efficiency.
- **Example**: In a switching power supply (SMPS), MOSFET is used as the main switch to regulate the current flow of the power supply to ensure efficient and stable operation of the power supply.
2. **Load switch**:
- **Application**: This MOSFET can be used in load switch applications to control the current flow and the switching state of the load. It can withstand higher voltages and medium currents and is suitable for various load switching circuits.
- **Example**: In a motor drive system, MOSFET is used to control the start and stop of the motor to ensure that the motor can operate stably under different load conditions.
3. **Switching circuit**:
- **Application**: IRFU110PBF-VB can be used in efficient switching circuits to handle medium voltage and current switching control. Its low on-resistance makes it effective in reducing power consumption in switching applications.
- **Example**: In a high-voltage switching circuit, MOSFET is used to switch voltage to different loads or circuit segments to achieve functional switching and protection of the circuit.
The medium current capability and low on-resistance characteristics of IRFU110PBF-VB make it very reliable in power management, load switching and switching circuits, suitable for a variety of applications requiring efficient and stable switching control.
1. **Power management**:
- **Application**: IRFU110PBF-VB is suitable for switch control in power management systems, especially in situations where medium current and voltage are required. Its low on-resistance helps reduce power consumption and improve efficiency.
- **Example**: In a switching power supply (SMPS), MOSFET is used as the main switch to regulate the current flow of the power supply to ensure efficient and stable operation of the power supply.
2. **Load switch**:
- **Application**: This MOSFET can be used in load switch applications to control the current flow and the switching state of the load. It can withstand higher voltages and medium currents and is suitable for various load switching circuits.
- **Example**: In a motor drive system, MOSFET is used to control the start and stop of the motor to ensure that the motor can operate stably under different load conditions.
3. **Switching circuit**:
- **Application**: IRFU110PBF-VB can be used in efficient switching circuits to handle medium voltage and current switching control. Its low on-resistance makes it effective in reducing power consumption in switching applications.
- **Example**: In a high-voltage switching circuit, MOSFET is used to switch voltage to different loads or circuit segments to achieve functional switching and protection of the circuit.
The medium current capability and low on-resistance characteristics of IRFU110PBF-VB make it very reliable in power management, load switching and switching circuits, suitable for a variety of applications requiring efficient and stable switching control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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