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IRFU1018EPBF-VB Product details
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IRFU1018EPBF-VB MOSFET Product Introduction
**IRFU1018EPBF-VB** is a high-performance N-Channel MOSFET in TO251 package. This MOSFET has a drain-source withstand voltage (VDS) of 60V and a maximum drain current (ID) of up to 97A. Using Trench technology, IRFU1018EPBF-VB has very low on-state resistance (RDS(ON)), suitable for high-efficiency switching and power management applications.
**IRFU1018EPBF-VB** is a high-performance N-Channel MOSFET in TO251 package. This MOSFET has a drain-source withstand voltage (VDS) of 60V and a maximum drain current (ID) of up to 97A. Using Trench technology, IRFU1018EPBF-VB has very low on-state resistance (RDS(ON)), suitable for high-efficiency switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
IRFU1018EPBF-VB MOSFET Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 60V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-state resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench technology
- **Package**: TO251
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 60V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-state resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 97A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **DC-DC converter**:
- In DC-DC converter applications, the low RDS(ON) and high current handling capability of IRFU1018EPBF-VB enable efficient voltage conversion, reduce switching losses, and improve overall system efficiency, making it suitable for voltage regulation and power conversion modules.
2. **Motor control**:
- This MOSFET can be used in motor control circuits, capable of handling high currents and providing reliable switching performance, suitable for driving power tools, electric bicycles, and various industrial motors.
3. **Power management system**:
- In power management systems, the high current carrying capability and low on-state resistance characteristics of IRFU1018EPBF-VB help optimize power distribution and protection circuits, and improve system stability and efficiency.
4. **Battery Management**:
- In the battery management system, this MOSFET can effectively control the battery charge and discharge process, prevent overcurrent and overvoltage, and is suitable for battery protection and battery pack balancing applications.
5. **Power Amplifier**:
- In power amplifier applications, the high current capability and low RDS(ON) of IRFU1018EPBF-VB can improve the efficiency and performance of the power amplifier, and is suitable for audio and RF power amplifiers.
IRFU1018EPBF-VB is a MOSFET designed for high current and high efficiency applications. Its superior performance and reliability make it an ideal choice for power switches and power management systems.
1. **DC-DC converter**:
- In DC-DC converter applications, the low RDS(ON) and high current handling capability of IRFU1018EPBF-VB enable efficient voltage conversion, reduce switching losses, and improve overall system efficiency, making it suitable for voltage regulation and power conversion modules.
2. **Motor control**:
- This MOSFET can be used in motor control circuits, capable of handling high currents and providing reliable switching performance, suitable for driving power tools, electric bicycles, and various industrial motors.
3. **Power management system**:
- In power management systems, the high current carrying capability and low on-state resistance characteristics of IRFU1018EPBF-VB help optimize power distribution and protection circuits, and improve system stability and efficiency.
4. **Battery Management**:
- In the battery management system, this MOSFET can effectively control the battery charge and discharge process, prevent overcurrent and overvoltage, and is suitable for battery protection and battery pack balancing applications.
5. **Power Amplifier**:
- In power amplifier applications, the high current capability and low RDS(ON) of IRFU1018EPBF-VB can improve the efficiency and performance of the power amplifier, and is suitable for audio and RF power amplifiers.
IRFU1018EPBF-VB is a MOSFET designed for high current and high efficiency applications. Its superior performance and reliability make it an ideal choice for power switches and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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