IRFTS9342TRPBF-VB Product details
Product introduction:
**IRFTS9342TRPBF-VB** is a high-performance P-channel MOSFET packaged in SOT23-6. It uses advanced Trench technology and is designed for applications that require low on-resistance and high efficiency. The MOSFET has a drain-source withstand voltage of -30V and a gate-source withstand voltage of ±20V. Its gate threshold voltage is -1.7V, allowing it to start at a lower gate voltage. The on-resistance of the IRFTS9342TRPBF-VB is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V. It can handle a drain current of up to -4.8A and is suitable for low-voltage, high-efficiency power management and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Model**: IRFTS9342TRPBF-VB
- **Package**: SOT23-6
- **Configuration**: Unipolar P-channel
- **Drain-source withstand voltage (VDS)**: -30V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ (at VGS=4.5V)
- 49mΩ (at VGS=10V)
- **Drain current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications:
1. **Power switch**:
IRFTS9342TRPBF-VB is ideal for low voltage power switches such as DC-DC converters and power management modules. Its low on-resistance and high efficiency enable it to switch current efficiently, reduce power loss, and improve the overall performance of the system.
2. **Motor control**:
In motor control applications, this MOSFET can effectively control the start and stop and speed regulation of the motor. Its efficient switching characteristics and moderate current capability make it suitable for small motor drive systems.
3. **Load switch**:
IRFTS9342TRPBF-VB is suitable for a variety of low voltage load switching applications. Its low on-resistance and high switching efficiency enable it to reliably switch loads, improving the response speed and stability of the system.
4. **Power management and protection**:
In power management and protection circuits, this MOSFET can provide stable switching functions for power protection and current control. Its low on-resistance helps reduce power loss and ensure circuit reliability.
5. **Automotive Electronics**:
In automotive electronic systems, especially in applications that require efficient switching and load management, the IRFTS9342TRPBF-VB performs well. It can operate stably in an automotive environment and provide reliable switching functions, suitable for automotive power management systems and other electronic modules.
With its low on-resistance and high efficiency, the IRFTS9342TRPBF-VB is widely used in low-voltage power switches, motor control, load switches and power management, ensuring efficient operation and reliability of the system.
Technical support:
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