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IRFSL59N10D-VB Product details
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Product Introduction
**IRFSL59N10D-VB** is a high-performance N-channel MOSFET packaged in TO262. It uses advanced Trench technology and is designed for applications that require high current and low on-resistance. The MOSFET has a drain-source withstand voltage of 100V and a gate-source withstand voltage of 20V. The gate threshold voltage of the IRFSL59N10D-VB is 2.5V, enabling it to start at a lower gate drive voltage. Its on-resistance is 10mΩ at VGS=4.5V and 9mΩ at VGS=10V. It can handle drain currents of up to 100A and is ideal for high current and high power applications.
**IRFSL59N10D-VB** is a high-performance N-channel MOSFET packaged in TO262. It uses advanced Trench technology and is designed for applications that require high current and low on-resistance. The MOSFET has a drain-source withstand voltage of 100V and a gate-source withstand voltage of 20V. The gate threshold voltage of the IRFSL59N10D-VB is 2.5V, enabling it to start at a lower gate drive voltage. Its on-resistance is 10mΩ at VGS=4.5V and 9mΩ at VGS=10V. It can handle drain currents of up to 100A and is ideal for high current and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: IRFSL59N10D-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ (at VGS=4.5V)
- 9mΩ (at VGS=10V)
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: IRFSL59N10D-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ (at VGS=4.5V)
- 9mΩ (at VGS=10V)
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **High-power power switch**:
IRFSL59N10D-VB is ideal for high-power power switches such as DC-DC converters and power modules. Its low on-resistance and high current capability enable it to efficiently handle large currents in the power supply, ensuring stable power conversion.
2. **Motor drive system**:
In motor drive applications, this MOSFET can effectively control the start and stop and speed regulation of the motor. Due to its high current handling capability and low on-resistance, it can provide strong current support when the motor starts and runs.
3. **Load switch**:
IRFSL59N10D-VB is suitable for use as a high-current load switch. In various electronic devices, it is able to safely and reliably switch high-current loads, reduce power losses and improve system efficiency.
4. **Power Management**:
In power management modules, such as power management systems and power regulation circuits, the high current capability and low on-resistance of the IRFSL59N10D-VB enable it to provide precise power control and stable performance.
5. **Automotive Electronics**:
In automotive electronic systems, especially high current switches and power management systems, the IRFSL59N10D-VB is able to provide efficient switching functions. It can operate stably in the harsh environment of the car to ensure the reliability of the power system.
With its excellent current handling capability and low on-resistance, the IRFSL59N10D-VB performs well in a variety of high current, high power demand application scenarios, providing efficient and stable current control for the system.
1. **High-power power switch**:
IRFSL59N10D-VB is ideal for high-power power switches such as DC-DC converters and power modules. Its low on-resistance and high current capability enable it to efficiently handle large currents in the power supply, ensuring stable power conversion.
2. **Motor drive system**:
In motor drive applications, this MOSFET can effectively control the start and stop and speed regulation of the motor. Due to its high current handling capability and low on-resistance, it can provide strong current support when the motor starts and runs.
3. **Load switch**:
IRFSL59N10D-VB is suitable for use as a high-current load switch. In various electronic devices, it is able to safely and reliably switch high-current loads, reduce power losses and improve system efficiency.
4. **Power Management**:
In power management modules, such as power management systems and power regulation circuits, the high current capability and low on-resistance of the IRFSL59N10D-VB enable it to provide precise power control and stable performance.
5. **Automotive Electronics**:
In automotive electronic systems, especially high current switches and power management systems, the IRFSL59N10D-VB is able to provide efficient switching functions. It can operate stably in the harsh environment of the car to ensure the reliability of the power system.
With its excellent current handling capability and low on-resistance, the IRFSL59N10D-VB performs well in a variety of high current, high power demand application scenarios, providing efficient and stable current control for the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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