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IRFSL4615-VB Product details
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IRFSL4615-VB Product Introduction
**IRFSL4615-VB** is a high-performance N-Channel MOSFET in TO262 package based on advanced Trench technology. This MOSFET provides a drain-source withstand voltage of up to 150V and has a very low on-resistance of only 30mΩ. This makes it excel in high-current applications. The IRFSL4615-VB is suitable for power management and switching applications that require high current and low on-resistance, and is an ideal choice for high-efficiency electronic devices.
**IRFSL4615-VB** is a high-performance N-Channel MOSFET in TO262 package based on advanced Trench technology. This MOSFET provides a drain-source withstand voltage of up to 150V and has a very low on-resistance of only 30mΩ. This makes it excel in high-current applications. The IRFSL4615-VB is suitable for power management and switching applications that require high current and low on-resistance, and is an ideal choice for high-efficiency electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 150V | 3V | 50A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 150V | 3V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 150V | 3V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**: 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**: 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**: The low on-resistance and high current handling capability of the IRFSL4615-VB make it ideal for power management applications. For example, in a high-efficiency switch mode power supply (SMPS), this MOSFET can be used as the main switching element to improve the efficiency and stability of the system.
2. **Motor drive**: In motor drive applications, the IRFSL4615-VB can be used as a switching element in the motor control circuit. Its high current capability and low on-resistance ensure smooth operation of the motor under high load conditions, making it ideal for electric vehicles, industrial motor drives, and home appliance motor control.
3. **DC-DC converter**: In DC-DC converters, the IRFSL4615-VB is able to handle high current and high efficiency requirements. Its low on-resistance reduces energy loss, and its high current capability makes it suitable for voltage conversion applications that require high efficiency and high reliability.
4. **Power amplifier**: In the power amplifier circuit, the high current carrying capacity and low on-resistance of IRFSL4615-VB enable it to work stably under high power output conditions. It is suitable for amplifier applications requiring high power and high efficiency in broadcast equipment and communication systems.
These areas demonstrate the advantages of IRFSL4615-VB in applications requiring high current and low on-resistance, making it an ideal choice for a variety of high-efficiency electronic devices.
1. **Power management**: The low on-resistance and high current handling capability of the IRFSL4615-VB make it ideal for power management applications. For example, in a high-efficiency switch mode power supply (SMPS), this MOSFET can be used as the main switching element to improve the efficiency and stability of the system.
2. **Motor drive**: In motor drive applications, the IRFSL4615-VB can be used as a switching element in the motor control circuit. Its high current capability and low on-resistance ensure smooth operation of the motor under high load conditions, making it ideal for electric vehicles, industrial motor drives, and home appliance motor control.
3. **DC-DC converter**: In DC-DC converters, the IRFSL4615-VB is able to handle high current and high efficiency requirements. Its low on-resistance reduces energy loss, and its high current capability makes it suitable for voltage conversion applications that require high efficiency and high reliability.
4. **Power amplifier**: In the power amplifier circuit, the high current carrying capacity and low on-resistance of IRFSL4615-VB enable it to work stably under high power output conditions. It is suitable for amplifier applications requiring high power and high efficiency in broadcast equipment and communication systems.
These areas demonstrate the advantages of IRFSL4615-VB in applications requiring high current and low on-resistance, making it an ideal choice for a variety of high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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