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IRFSL38N20D-VB Product details
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IRFSL38N20D-VB MOSFET Product Introduction
**IRFSL38N20D-VB** is a high-performance N-Channel MOSFET in TO262 package with 200V drain-source withstand voltage (VDS) and up to 45A maximum drain current (ID). This MOSFET uses Trench technology to optimize switching efficiency and reduce on-state resistance, suitable for applications requiring high current and high voltage.
**IRFSL38N20D-VB** is a high-performance N-Channel MOSFET in TO262 package with 200V drain-source withstand voltage (VDS) and up to 45A maximum drain current (ID). This MOSFET uses Trench technology to optimize switching efficiency and reduce on-state resistance, suitable for applications requiring high current and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IRFSL38N20D-VB MOSFET Detailed parameter description
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-state resistance (RDS(ON))**: 38mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench technology
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-state resistance (RDS(ON))**: 38mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **High-power switching power supply**:
- In high-power switching power supply systems, the high voltage tolerance and low RDS(ON) of IRFSL38N20D-VB can effectively reduce switching losses and improve efficiency, making it suitable for high-power and high-current power conversion applications.
2. **Motor driver**:
- In motor drive circuits, this MOSFET can handle higher currents and voltages, ensuring the stability and reliability of motor drive, and is suitable for various power tools and industrial motor control systems.
3. **Automotive power management**:
- Used in automotive power management systems, the high voltage and high current handling capabilities of IRFSL38N20D-VB make it suitable for automotive battery management and power distribution, providing stable current control and protection.
4. **Battery protection circuit**:
- In the battery protection circuit, this MOSFET can effectively manage and control the battery charging and discharging process, prevent overcurrent and overvoltage conditions, and improve battery life and safety.
5. **Power amplifier**:
- In power amplifier applications, the high current and low RDS(ON) characteristics of IRFSL38N20D-VB can optimize the performance of the power amplifier, and are suitable for use in audio amplifiers and RF amplifiers to improve amplification and power efficiency.
IRFSL38N20D-VB is a MOSFET suitable for high voltage and high current applications. Its excellent performance and high reliability make it excellent in a variety of power management and switching applications.
1. **High-power switching power supply**:
- In high-power switching power supply systems, the high voltage tolerance and low RDS(ON) of IRFSL38N20D-VB can effectively reduce switching losses and improve efficiency, making it suitable for high-power and high-current power conversion applications.
2. **Motor driver**:
- In motor drive circuits, this MOSFET can handle higher currents and voltages, ensuring the stability and reliability of motor drive, and is suitable for various power tools and industrial motor control systems.
3. **Automotive power management**:
- Used in automotive power management systems, the high voltage and high current handling capabilities of IRFSL38N20D-VB make it suitable for automotive battery management and power distribution, providing stable current control and protection.
4. **Battery protection circuit**:
- In the battery protection circuit, this MOSFET can effectively manage and control the battery charging and discharging process, prevent overcurrent and overvoltage conditions, and improve battery life and safety.
5. **Power amplifier**:
- In power amplifier applications, the high current and low RDS(ON) characteristics of IRFSL38N20D-VB can optimize the performance of the power amplifier, and are suitable for use in audio amplifiers and RF amplifiers to improve amplification and power efficiency.
IRFSL38N20D-VB is a MOSFET suitable for high voltage and high current applications. Its excellent performance and high reliability make it excellent in a variety of power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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