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IRFSL3607-VB Product details
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Product Introduction
**IRFSL3607-VB** is a high-performance N-Channel MOSFET in TO262 package, using advanced Trench technology. This MOSFET has high conductivity and low on-resistance, which is very suitable for use in high current and high frequency applications. Its 80V drain-source voltage and up to 85A maximum drain current make it excellent in demanding power management and switch control systems. The low on-resistance and high current carrying capacity of IRFSL3607-VB give it excellent performance in a variety of applications.
**IRFSL3607-VB** is a high-performance N-Channel MOSFET in TO262 package, using advanced Trench technology. This MOSFET has high conductivity and low on-resistance, which is very suitable for use in high current and high frequency applications. Its 80V drain-source voltage and up to 85A maximum drain current make it excellent in demanding power management and switch control systems. The low on-resistance and high current carrying capacity of IRFSL3607-VB give it excellent performance in a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power switch**: Due to its extremely low on-resistance, the IRFSL3607-VB is very suitable for use in efficient power switch modules. For example, in DC-DC converters, it can be used as a switching element to reduce power consumption and improve overall efficiency.
2. **Motor drive**: In motor drive systems, this MOSFET can handle large currents and is suitable for current switching in industrial motor control and automation equipment to ensure system reliability and stability.
3. **Computer and communication equipment**: In computer power supplies and communication equipment, the IRFSL3607-VB can be used as an efficient switching element to optimize power management and provide a stable current supply to meet the needs of high-frequency operations.
4. **Battery management system**: In battery management systems, such as battery pack management in electric vehicles, the low on-resistance and high current capability of this MOSFET enable it to effectively control the charging and discharging process, improving the performance and life of the battery.
The high current carrying capability and low on-resistance of the IRFSL3607-VB enable it to excel in multiple high-performance power applications, suitable for systems requiring high efficiency and stability.
1. **Power switch**: Due to its extremely low on-resistance, the IRFSL3607-VB is very suitable for use in efficient power switch modules. For example, in DC-DC converters, it can be used as a switching element to reduce power consumption and improve overall efficiency.
2. **Motor drive**: In motor drive systems, this MOSFET can handle large currents and is suitable for current switching in industrial motor control and automation equipment to ensure system reliability and stability.
3. **Computer and communication equipment**: In computer power supplies and communication equipment, the IRFSL3607-VB can be used as an efficient switching element to optimize power management and provide a stable current supply to meet the needs of high-frequency operations.
4. **Battery management system**: In battery management systems, such as battery pack management in electric vehicles, the low on-resistance and high current capability of this MOSFET enable it to effectively control the charging and discharging process, improving the performance and life of the battery.
The high current carrying capability and low on-resistance of the IRFSL3607-VB enable it to excel in multiple high-performance power applications, suitable for systems requiring high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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