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IRFSL3507-VB Product details
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IRFSL3507-VB Product Introduction
IRFSL3507-VB is a high-performance N-Channel MOSFET in a TO262 package. This MOSFET is designed for applications that require high current and low on-resistance, and can operate stably at a maximum drain-source voltage of 80V. The maximum gate-source voltage of IRFSL3507-VB is ±20V, and the threshold voltage (Vth) is 3V. Its on-resistance (RDS(ON)) is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, demonstrating its excellent low impedance characteristics. The maximum drain current (ID) reaches 85A, making it ideal for high current applications. This MOSFET uses advanced Trench technology to further optimize its electrical performance and thermal management.
IRFSL3507-VB is a high-performance N-Channel MOSFET in a TO262 package. This MOSFET is designed for applications that require high current and low on-resistance, and can operate stably at a maximum drain-source voltage of 80V. The maximum gate-source voltage of IRFSL3507-VB is ±20V, and the threshold voltage (Vth) is 3V. Its on-resistance (RDS(ON)) is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, demonstrating its excellent low impedance characteristics. The maximum drain current (ID) reaches 85A, making it ideal for high current applications. This MOSFET uses advanced Trench technology to further optimize its electrical performance and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: IRFSL3507-VB
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Model**: IRFSL3507-VB
- **Package**: TO262
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The low on-resistance and high current handling capability of the IRFSL3507-VB MOSFET make it suitable for the following areas:
1. **Power Management and DC-DC Converters**: In power management systems, the IRFSL3507-VB can be used in high-current DC-DC converters as the main switching element. Its low RDS(ON) characteristics ensure high efficiency under high current conditions and reduce energy loss and heat generation, thereby improving the overall performance and reliability of the system.
2. **Electric Vehicle (EV) Drive System**: In the motor drive system of electric vehicles, this MOSFET can be used as a switching element in the motor drive circuit. Its high current carrying capability and low on-resistance enable it to support the high load requirements of electric vehicle motors, providing smooth current control and efficient energy transfer.
3. **High-Efficiency Battery Management System**: In battery management systems, the low on-resistance of the IRFSL3507-VB helps improve the charging and discharging efficiency of the battery. This MOSFET can be used as a switch in a battery management system to optimize the battery charging and discharging process and extend the battery life.
4. **Power amplifier and switching circuit**: In power amplifier and switching circuit, IRFSL3507-VB can be used to handle high current applications. Its low RDS(ON) characteristics and high current capability make it suitable for power switching operations that require high efficiency and low power loss, such as in high power electronic equipment and industrial power control.
These application scenarios demonstrate the wide applicability of IRFSL3507-VB in various electronic systems that require high current and low on-resistance.
The low on-resistance and high current handling capability of the IRFSL3507-VB MOSFET make it suitable for the following areas:
1. **Power Management and DC-DC Converters**: In power management systems, the IRFSL3507-VB can be used in high-current DC-DC converters as the main switching element. Its low RDS(ON) characteristics ensure high efficiency under high current conditions and reduce energy loss and heat generation, thereby improving the overall performance and reliability of the system.
2. **Electric Vehicle (EV) Drive System**: In the motor drive system of electric vehicles, this MOSFET can be used as a switching element in the motor drive circuit. Its high current carrying capability and low on-resistance enable it to support the high load requirements of electric vehicle motors, providing smooth current control and efficient energy transfer.
3. **High-Efficiency Battery Management System**: In battery management systems, the low on-resistance of the IRFSL3507-VB helps improve the charging and discharging efficiency of the battery. This MOSFET can be used as a switch in a battery management system to optimize the battery charging and discharging process and extend the battery life.
4. **Power amplifier and switching circuit**: In power amplifier and switching circuit, IRFSL3507-VB can be used to handle high current applications. Its low RDS(ON) characteristics and high current capability make it suitable for power switching operations that require high efficiency and low power loss, such as in high power electronic equipment and industrial power control.
These application scenarios demonstrate the wide applicability of IRFSL3507-VB in various electronic systems that require high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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