IRFSL23N20D-VB Product details
Product introduction:
**IRFSL23N20D-VB** is a high-performance N-channel MOSFET in TO262 package, manufactured using Trench technology. Designed for medium to high voltage applications, this MOSFET has low on-resistance and high drain current handling capability, making it excel in a variety of power switching applications. The IRFSL23N20D-VB supports drain-source voltages up to 200V and can handle drain currents up to 45A, making it suitable for electronic devices and systems that require efficient switching and current control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- **Model**: IRFSL23N20D-VB
- **Package**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ (VGS = 10V)
- **Drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications:
**IRFSL23N20D-VB** is mainly suitable for the following fields and modules:
1. **Switching power supply**: In switching power supply design, the low on-resistance and high current handling capability of IRFSL23N20D-VB make it very suitable for high-efficiency switching control. It can work stably under high voltage and high current conditions, improving the efficiency and reliability of the power supply.
2. **Motor drive**: This MOSFET can be used in motor drive circuits to provide high current and high voltage support. Its high drain current capability and low on-resistance enable it to effectively control the operating state of the motor, and excel in industrial and automotive motor drive applications.
3. **Power amplifier**: In power amplifier applications, the high current and high voltage handling capabilities of IRFSL23N20D-VB can meet the needs of power amplifiers. It can effectively handle high-power signals during amplification to ensure stable performance.
4. **LED drive**: In LED drive circuits, the IRFSL23N20D-VB can be used as a switching element to adjust the on/off and brightness of LED lighting. Its low on-resistance enables it to operate at low power consumption, providing an efficient LED drive solution.
5. **Power management**: This MOSFET is also suitable for a variety of power management applications, including power protection and power switching. Its high voltage and high current handling capabilities enable it to effectively perform power switching and overcurrent protection, ensuring the stability and safety of the power system.
These application areas require MOSFETs to operate stably under higher voltage and current conditions, and the high performance characteristics of the IRFSL23N20D-VB make it an ideal choice for these applications.
Technical support:
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