IRFS9533-VB Product details
Product introduction:
**IRFS9533-VB** is a high-performance P-channel MOSFET in TO220F package, designed for applications with high current and high switching efficiency. The maximum drain-source voltage (VDS) of this MOSFET is -60V, which is suitable for operation in a negative voltage environment. Its threshold voltage (Vth) is -1.7V, ensuring that the MOSFET can start to conduct at a lower gate-source voltage. The on-resistance (RDS(ON)) is 120mΩ at VGS=4.5V and 100mΩ at VGS=10V, showing good conduction performance and low power consumption. Its maximum drain current (ID) is -20A, making it suitable for high current applications. Using Trench technology, IRFS9533-VB provides excellent switching performance and thermal management characteristics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
- **Model**: IRFS9533-VB
- **Package**: TO220F
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 120mΩ (at VGS=4.5V)
- 100mΩ (at VGS=10V)
- **Maximum drain current (ID)**: -20A
- **Technology**: Trench
Domain and module applications:
1. **Power switch**:
IRFS9533-VB is suitable for power switch modules, especially in negative voltage environments. Its maximum VDS of -60V can handle higher negative voltages, while its low on-resistance (100mΩ) helps reduce power consumption, enabling it to effectively control energy loss in power management and switching operations, thereby improving the efficiency and stability of the power supply.
2. **Battery management system**:
In the battery management system, IRFS9533-VB can be used to control the switching and protection circuits of the battery. Due to its high current handling capability (-20A) and excellent conduction performance, it can reliably switch the battery under high load current conditions, ensuring the safe and stable operation of the battery system.
3. **Load switch**:
This MOSFET performs well in load switch applications, especially in scenarios where negative voltage switching is required. It is suitable for various load switch controls, such as motor start control, load switching, etc. Its low on-resistance (100mΩ) helps reduce power consumption during switching and improves the overall efficiency of the system.
4. **Reverse current protection**:
IRFS9533-VB can be used in reverse current protection modules in circuits. Its P-channel configuration and negative voltage tolerance make it ideal for protecting circuits from reverse current damage and ensuring long-term reliability of circuits.
5. **Industrial control**:
In industrial control systems, this MOSFET can be used for high-current switching applications. Its high negative voltage tolerance and excellent switching characteristics make it suitable for switching control in industrial equipment, such as motor drive control, load switching, etc.
These application examples demonstrate the wide applicability and excellent performance of IRFS9533-VB in negative voltage environments and high-current applications.
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