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IRFS9520-VB Product details
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IRFS9520-VB MOSFET Product Introduction
**IRFS9520-VB** is a high-performance P-Channel MOSFET in TO220F package, designed for applications with high load current and high voltage. It has a maximum drain-source withstand voltage of 100V and a maximum drain current of 12A. This MOSFET uses Trench technology to improve efficiency and reduce on-state resistance, suitable for various power switching and power management applications.
**IRFS9520-VB** is a high-performance P-Channel MOSFET in TO220F package, designed for applications with high load current and high voltage. It has a maximum drain-source withstand voltage of 100V and a maximum drain current of 12A. This MOSFET uses Trench technology to improve efficiency and reduce on-state resistance, suitable for various power switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
IRFS9520-VB MOSFET Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single P-Channel
- **Drain-source withstand voltage (VDS)**: -100V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-state resistance (RDS(ON))**:
- 230mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -12A
- **Technology**: Trench technology
- **Package**: TO220F
- **Configuration**: Single P-Channel
- **Drain-source withstand voltage (VDS)**: -100V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-state resistance (RDS(ON))**:
- 230mΩ @ VGS = 4.5V
- 200mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -12A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **DC-DC converter**:
- In DC-DC converters, the P-Channel configuration and low RDS(ON) of IRFS9520-VB can effectively reduce switching losses and improve conversion efficiency, making it suitable for high-efficiency power conversion.
2. **Power management**:
- Used in power management modules, this MOSFET can handle large load currents and provide stable power regulation, suitable for high current and high power power systems.
3. **Load switch**:
- In high current load switch applications, IRFS9520-VB can be used as a high-efficiency load switch to ensure reliable switching under high load conditions, which is common in battery management and motor drive circuits.
4. **Power amplifier**:
- Used in power amplifiers, this MOSFET can effectively control the current and voltage of the power amplifier and provide stable amplification performance, suitable for audio amplifiers and radio transmitters.
5. **Automotive Electronics**:
- In automotive electronic systems, such as battery protection and power distribution, the high withstand voltage and low on-resistance characteristics of this MOSFET can effectively control power distribution and load switching, improving the overall performance and reliability of the system.
IRFS9520-VB is a P-Channel MOSFET designed to handle high current and high voltage. Its high performance and stability make it suitable for a wide range of power management and switching applications.
1. **DC-DC converter**:
- In DC-DC converters, the P-Channel configuration and low RDS(ON) of IRFS9520-VB can effectively reduce switching losses and improve conversion efficiency, making it suitable for high-efficiency power conversion.
2. **Power management**:
- Used in power management modules, this MOSFET can handle large load currents and provide stable power regulation, suitable for high current and high power power systems.
3. **Load switch**:
- In high current load switch applications, IRFS9520-VB can be used as a high-efficiency load switch to ensure reliable switching under high load conditions, which is common in battery management and motor drive circuits.
4. **Power amplifier**:
- Used in power amplifiers, this MOSFET can effectively control the current and voltage of the power amplifier and provide stable amplification performance, suitable for audio amplifiers and radio transmitters.
5. **Automotive Electronics**:
- In automotive electronic systems, such as battery protection and power distribution, the high withstand voltage and low on-resistance characteristics of this MOSFET can effectively control power distribution and load switching, improving the overall performance and reliability of the system.
IRFS9520-VB is a P-Channel MOSFET designed to handle high current and high voltage. Its high performance and stability make it suitable for a wide range of power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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