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IRFS830B-VB Product details
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Product Introduction
**IRFS830B-VB** is a high voltage N-channel MOSFET in TO220F package, designed for high voltage applications. This MOSFET is manufactured using Plannar technology, has high withstand voltage and low on-resistance, and is suitable for use in harsh power conversion and switch control environments. IRFS830B-VB can withstand drain-source voltages up to 650V and maintain stable performance under high voltage conditions, making it suitable for a variety of applications that require high voltage handling.
**IRFS830B-VB** is a high voltage N-channel MOSFET in TO220F package, designed for high voltage applications. This MOSFET is manufactured using Plannar technology, has high withstand voltage and low on-resistance, and is suitable for use in harsh power conversion and switch control environments. IRFS830B-VB can withstand drain-source voltages up to 650V and maintain stable performance under high voltage conditions, making it suitable for a variety of applications that require high voltage handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: IRFS830B-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ (VGS = 10V)
- **Drain current (ID)**: 7A
- **Technology**: Plannar
- **Model**: IRFS830B-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ (VGS = 10V)
- **Drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
**IRFS830B-VB** is mainly suitable for the following areas and modules:
1. **High voltage switching power supply**: In high voltage switching power supply applications, this MOSFET is suitable for use as a switching element, capable of reliably controlling the switching operation of the power supply at high voltage. Its high withstand voltage characteristics and large gate-source voltage make it stable during power conversion.
2. **Power inverter**: In power inverter systems, the IRFS830B-VB can be used for high voltage DC to AC conversion. Its high voltage withstand capability and large drain current handling capability enable it to be used in solar inverters and other power conversion equipment.
3. **Motor drive**: In motor drive applications, this MOSFET is able to handle higher voltages and currents, providing stable switching performance in motor control circuits. Despite its high on-resistance, its high voltage handling capability makes it suitable for high voltage motor drive systems.
4. **Lighting control system**: In high-voltage lighting control systems, IRFS830B-VB can be used as a switch element for high-voltage lighting systems to adjust lighting switches. Its high withstand voltage characteristics can meet the requirements of high-voltage lighting systems.
5. **Power supply protection**: In power supply protection circuits, IRFS830B-VB can be used for high-voltage overvoltage protection and switch control, providing reliable circuit protection functions.
These application areas require working under high voltage and high power conditions, and the high voltage tolerance and stable performance of IRFS830B-VB make it an ideal choice for these demanding environments.
**IRFS830B-VB** is mainly suitable for the following areas and modules:
1. **High voltage switching power supply**: In high voltage switching power supply applications, this MOSFET is suitable for use as a switching element, capable of reliably controlling the switching operation of the power supply at high voltage. Its high withstand voltage characteristics and large gate-source voltage make it stable during power conversion.
2. **Power inverter**: In power inverter systems, the IRFS830B-VB can be used for high voltage DC to AC conversion. Its high voltage withstand capability and large drain current handling capability enable it to be used in solar inverters and other power conversion equipment.
3. **Motor drive**: In motor drive applications, this MOSFET is able to handle higher voltages and currents, providing stable switching performance in motor control circuits. Despite its high on-resistance, its high voltage handling capability makes it suitable for high voltage motor drive systems.
4. **Lighting control system**: In high-voltage lighting control systems, IRFS830B-VB can be used as a switch element for high-voltage lighting systems to adjust lighting switches. Its high withstand voltage characteristics can meet the requirements of high-voltage lighting systems.
5. **Power supply protection**: In power supply protection circuits, IRFS830B-VB can be used for high-voltage overvoltage protection and switch control, providing reliable circuit protection functions.
These application areas require working under high voltage and high power conditions, and the high voltage tolerance and stable performance of IRFS830B-VB make it an ideal choice for these demanding environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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