IRFS7437-7PPBF-VB Product details
Product introduction:
IRFS7437-7PPBF-VB is a high-performance N-Channel MOSFET in TO263-7L package. It has a dual N-Channel configuration and is designed for applications that require high current, high power and high efficiency. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3V. The IRFS7437-7PPBF-VB uses advanced Trench technology to provide an extremely low RDS(ON) value of 0.9mΩ@VGS=10V, enabling it to maintain low on-resistance under high current conditions. Its rated drain current (ID) reaches 350A, which is suitable for high power density and high efficiency circuit design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | 0.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
- **Model**: IRFS7437-7PPBF-VB
- **Package**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 0.9mΩ@VGS=10V
- **Maximum drain current (ID)**: 350A
- **Technology**: Trench
Domain and module applications:
The IRFS7437-7PPBF-VB MOSFET is well suited for the following applications due to its high current capability and low on-resistance:
1. **Power Management**: In power management systems, this MOSFET can be used in high-power DC-DC converters and power switches because it can handle high currents and reduce energy losses. For example, in high-power power modules, the IRFS7437-7PPBF-VB can be used as the main switching element to provide efficient energy conversion and stable power output.
2. **Electric Vehicle (EV) Drive System**: In the drive system of an electric vehicle, this MOSFET can be used in the motor drive circuit to provide efficient current transfer. Due to its high current capacity and low on-resistance, it is able to support the high load requirements of electric vehicle motors and improve the overall efficiency and performance of the system.
3. **High-power switch**: In industrial applications, the IRFS7437-7PPBF-VB can be used as a high-power switch, such as a high-current switch in power conversion and control systems. For example, in a high-power motor controller, this MOSFET can be used to efficiently switch current to ensure system reliability and stability.
4. **High-efficiency battery management system**: In an efficient battery management system, the IRFS7437-7PPBF-VB can improve the battery charging and discharging efficiency, extend the battery life, and reduce heat generation in the system due to its low on-resistance characteristics.
These application scenarios show the wide applicability of the IRFS7437-7PPBF-VB in electronic systems with high power and high efficiency requirements.
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