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IRFS641-VB Product details
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IRFS641-VB Product Introduction
IRFS641-VB is a high-efficiency N-channel MOSFET in TO220F package. It is based on advanced Trench technology and has good conduction performance and voltage resistance characteristics. Its drain-source voltage (VDS) is 200V, the gate-source voltage (VGS) is ±20V, and it supports a continuous drain current of 20A. This makes it excel in high-power conversion and control applications. Its low RDS(ON) of 58mΩ (at VGS = 10V) ensures low conduction loss and excellent efficiency, making it ideal for high-frequency switching applications.
IRFS641-VB is a high-efficiency N-channel MOSFET in TO220F package. It is based on advanced Trench technology and has good conduction performance and voltage resistance characteristics. Its drain-source voltage (VDS) is 200V, the gate-source voltage (VGS) is ±20V, and it supports a continuous drain current of 20A. This makes it excel in high-power conversion and control applications. Its low RDS(ON) of 58mΩ (at VGS = 10V) ensures low conduction loss and excellent efficiency, making it ideal for high-frequency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: IRFS641-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ (@ VGS = 10V)
- **Continuous leakage current (ID)**: 20A
- **Pulse leakage current (ID, Pulse)**: Up to 80A
- **Power consumption (Ptot)**: 125W
- **Technology**: Trench
- **Model**: IRFS641-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ (@ VGS = 10V)
- **Continuous leakage current (ID)**: 20A
- **Pulse leakage current (ID, Pulse)**: Up to 80A
- **Power consumption (Ptot)**: 125W
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **High-frequency switching power supply (SMPS)**: The low RDS(ON) of IRFS641-VB significantly reduces conduction losses in high-frequency switching, making it suitable for high-efficiency switching power supply systems, especially in applications below 200V. Its high current carrying capacity and low on-resistance improve the efficiency of power conversion.
2. **Motor control system**: This MOSFET can drive high-current loads in the medium and high voltage range, making it an ideal choice for motor drive modules, especially in industrial automation or electric vehicle drive circuits, providing fast switching speeds and stable power output.
3. **DC-DC converter**: In medium-voltage DC-DC converters, IRFS641-VB provides excellent efficiency and low loss performance, making it particularly suitable for inverter circuits and communication equipment that require high efficiency.
4. **Lighting control system**: Due to its good switching characteristics and high power handling capability, IRFS641-VB is suitable for LED drive circuits or other high-voltage lighting modules, which can effectively improve the energy efficiency of the system.
IRFS641-VB combines its high current capability and low on-resistance, showing significant advantages in the fields of efficient power management, power conversion, industrial control, etc.
1. **High-frequency switching power supply (SMPS)**: The low RDS(ON) of IRFS641-VB significantly reduces conduction losses in high-frequency switching, making it suitable for high-efficiency switching power supply systems, especially in applications below 200V. Its high current carrying capacity and low on-resistance improve the efficiency of power conversion.
2. **Motor control system**: This MOSFET can drive high-current loads in the medium and high voltage range, making it an ideal choice for motor drive modules, especially in industrial automation or electric vehicle drive circuits, providing fast switching speeds and stable power output.
3. **DC-DC converter**: In medium-voltage DC-DC converters, IRFS641-VB provides excellent efficiency and low loss performance, making it particularly suitable for inverter circuits and communication equipment that require high efficiency.
4. **Lighting control system**: Due to its good switching characteristics and high power handling capability, IRFS641-VB is suitable for LED drive circuits or other high-voltage lighting modules, which can effectively improve the energy efficiency of the system.
IRFS641-VB combines its high current capability and low on-resistance, showing significant advantages in the fields of efficient power management, power conversion, industrial control, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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