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IRFS640B-VB Product details
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1. IRFS640B-VB Product Introduction
IRFS640B-VB is a high-voltage N-channel MOSFET in TO220F package, suitable for a variety of high voltage and high current applications. Its drain-source voltage (VDS) is 200V and gate-source voltage (VGS) is ±20V, capable of handling high voltage loads. The threshold voltage (Vth) of this MOSFET is 3V, ensuring effective turn-on at a lower gate-source voltage. Using Trench technology, IRFS640B-VB provides an on-resistance (RDS(ON)) of 58mΩ at a VGS of 10V, with good conductivity and low power loss. Its maximum drain current (ID) is 20A, making it suitable for high current applications. Designed for high voltage environments, IRFS640B-VB provides stable and reliable switching performance, suitable for power management and power conversion systems.
IRFS640B-VB is a high-voltage N-channel MOSFET in TO220F package, suitable for a variety of high voltage and high current applications. Its drain-source voltage (VDS) is 200V and gate-source voltage (VGS) is ±20V, capable of handling high voltage loads. The threshold voltage (Vth) of this MOSFET is 3V, ensuring effective turn-on at a lower gate-source voltage. Using Trench technology, IRFS640B-VB provides an on-resistance (RDS(ON)) of 58mΩ at a VGS of 10V, with good conductivity and low power loss. Its maximum drain current (ID) is 20A, making it suitable for high current applications. Designed for high voltage environments, IRFS640B-VB provides stable and reliable switching performance, suitable for power management and power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of IRFS640B-VB
- **Package type**: TO220F
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
- **Package type**: TO220F
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
III. Application Fields and Module Examples
1. **Power Converter**: In high voltage power converters, IRFS640B-VB can be used in DC-DC converters and AC-DC adapters. Its high drain-source voltage and low on-resistance enable it to handle high power currents, improving system efficiency and stability.
2. **Industrial Power Switch**: Suitable for industrial power switches and motor control systems. It can operate stably under high voltage and high current conditions, making it very suitable for use in motor drive and power control modules.
3. **Power Amplifier**: In power amplifiers and high power RF applications, the high voltage handling capability and low on-resistance of IRFS640B-VB make it an ideal switching element, helping to improve amplifier efficiency and performance.
4. **Inverter**: Used in solar and wind inverter systems. The MOSFET can handle high voltage and high current, supporting the stable operation of the inverter under high power operation and optimizing the energy conversion process.
5. **Electric Vehicles and Battery Management**: In electric vehicles and battery management systems, the IRFS640B-VB can be used for high-voltage battery protection and switch management to ensure safe operation under high current loads.
The IRFS640B-VB combines high voltage tolerance and low on-resistance, making it suitable for a variety of high voltage and high current applications, providing a reliable solution for power management and power control.
1. **Power Converter**: In high voltage power converters, IRFS640B-VB can be used in DC-DC converters and AC-DC adapters. Its high drain-source voltage and low on-resistance enable it to handle high power currents, improving system efficiency and stability.
2. **Industrial Power Switch**: Suitable for industrial power switches and motor control systems. It can operate stably under high voltage and high current conditions, making it very suitable for use in motor drive and power control modules.
3. **Power Amplifier**: In power amplifiers and high power RF applications, the high voltage handling capability and low on-resistance of IRFS640B-VB make it an ideal switching element, helping to improve amplifier efficiency and performance.
4. **Inverter**: Used in solar and wind inverter systems. The MOSFET can handle high voltage and high current, supporting the stable operation of the inverter under high power operation and optimizing the energy conversion process.
5. **Electric Vehicles and Battery Management**: In electric vehicles and battery management systems, the IRFS640B-VB can be used for high-voltage battery protection and switch management to ensure safe operation under high current loads.
The IRFS640B-VB combines high voltage tolerance and low on-resistance, making it suitable for a variety of high voltage and high current applications, providing a reliable solution for power management and power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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