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IRFS59N10DTRRPBF-VB Product details
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1. IRFS59N10DTRRPBF-VB Product Introduction
IRFS59N10DTRRPBF-VB is a high-performance N-channel MOSFET with a TO263 package type. This MOSFET is designed for high voltage and high current applications, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.8V, ensuring reliable turn-on at a lower gate-source voltage. IRFS59N10DTRRPBF-VB uses Trench technology and has an on-resistance (RDS(ON)) of 20mΩ at a VGS of 10V, providing excellent conductivity. The maximum drain current (ID) is 70A, which is suitable for stable operation under high current loads. This MOSFET has high efficiency, low switching losses and excellent thermal performance, and is widely used in various power conversion and power management systems.
IRFS59N10DTRRPBF-VB is a high-performance N-channel MOSFET with a TO263 package type. This MOSFET is designed for high voltage and high current applications, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.8V, ensuring reliable turn-on at a lower gate-source voltage. IRFS59N10DTRRPBF-VB uses Trench technology and has an on-resistance (RDS(ON)) of 20mΩ at a VGS of 10V, providing excellent conductivity. The maximum drain current (ID) is 70A, which is suitable for stable operation under high current loads. This MOSFET has high efficiency, low switching losses and excellent thermal performance, and is widely used in various power conversion and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. IRFS59N10DTRRPBF-VB Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO263
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 20mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
1. **Power management**: IRFS59N10DTRRPBF-VB is suitable for power management systems such as high-efficiency DC-DC converters. Its low on-resistance and high current handling capability enable it to reduce power loss and improve system efficiency during power conversion.
2. **Electric vehicles**: In the motor drive system and battery management system of electric vehicles, this MOSFET is able to handle high current and high voltage, ensuring the stability and efficiency of electric vehicles under high load conditions.
3. **Inverter**: For solar and wind inverter systems, IRFS59N10DTRRPBF-VB is able to handle high voltage input and high current output, supporting the reliable operation of the inverter in high power environments.
4. **Industrial power**: In industrial power supply and control systems, this MOSFET can be used for motor drive, power switching and high power load control, and its high current capability and low switching loss provide excellent performance.
5. **High Power Switch**: In applications that require high voltage and high current handling, such as welding machines, laser cutting machines, etc., the IRFS59N10DTRRPBF-VB can serve as a key switching element to ensure the reliability and stability of the equipment under high power operation.
The high current capability and low on-resistance of the IRFS59N10DTRRPBF-VB make it excel in a variety of high power and high voltage applications, and is an ideal choice for efficient power conversion and power management.
1. **Power management**: IRFS59N10DTRRPBF-VB is suitable for power management systems such as high-efficiency DC-DC converters. Its low on-resistance and high current handling capability enable it to reduce power loss and improve system efficiency during power conversion.
2. **Electric vehicles**: In the motor drive system and battery management system of electric vehicles, this MOSFET is able to handle high current and high voltage, ensuring the stability and efficiency of electric vehicles under high load conditions.
3. **Inverter**: For solar and wind inverter systems, IRFS59N10DTRRPBF-VB is able to handle high voltage input and high current output, supporting the reliable operation of the inverter in high power environments.
4. **Industrial power**: In industrial power supply and control systems, this MOSFET can be used for motor drive, power switching and high power load control, and its high current capability and low switching loss provide excellent performance.
5. **High Power Switch**: In applications that require high voltage and high current handling, such as welding machines, laser cutting machines, etc., the IRFS59N10DTRRPBF-VB can serve as a key switching element to ensure the reliability and stability of the equipment under high power operation.
The high current capability and low on-resistance of the IRFS59N10DTRRPBF-VB make it excel in a variety of high power and high voltage applications, and is an ideal choice for efficient power conversion and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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