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IRFS543-VB Product details
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IRFS543-VB MOSFET Product Introduction
IRFS543-VB is a single N-channel MOSFET in TO220F package. Designed using trench technology, this MOSFET can withstand drain-source voltage (VDS) up to 60V and provide a maximum continuous drain current of 45A. The on-resistance (RDS(ON)) of IRFS543-VB is 27mΩ at VGS of 10V, which makes it excellent in high current and high power applications. Its low threshold voltage (Vth) and high current carrying capability make it suitable for a variety of power management and switching applications.
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IRFS543-VB is a single N-channel MOSFET in TO220F package. Designed using trench technology, this MOSFET can withstand drain-source voltage (VDS) up to 60V and provide a maximum continuous drain current of 45A. The on-resistance (RDS(ON)) of IRFS543-VB is 27mΩ at VGS of 10V, which makes it excellent in high current and high power applications. Its low threshold voltage (Vth) and high current carrying capability make it suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
IRFS543-VB detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology type**: Trench technology
The low on-resistance and high current handling capability of IRFS543-VB enable it to effectively reduce power consumption and improve system efficiency in high-power applications. Its TO220F package provides good thermal management performance and is suitable for high power density applications.
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- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology type**: Trench technology
The low on-resistance and high current handling capability of IRFS543-VB enable it to effectively reduce power consumption and improve system efficiency in high-power applications. Its TO220F package provides good thermal management performance and is suitable for high power density applications.
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Domain and module applications：
Application fields and module examples
1. **Power management and switch control**: IRFS543-VB is suitable for power management and switch control applications. In switching power supplies, DC-DC converters, and power protection modules, this MOSFET provides stable switching performance and efficient power management, suitable for handling high current loads.
2. **Electric vehicle drive system**: In the motor drive system and battery management system of electric vehicles, IRFS543-VB can support high current switch control. Its low on-resistance helps reduce power loss and improve system efficiency, and is suitable for current regulation in electric drive systems.
3. **Industrial equipment**: In industrial equipment and motor control systems, IRFS543-VB can be used for high current switching applications. Its high current carrying capacity and low on-resistance enable it to provide reliable switching functions in high power devices.
4. **High power load switch**: IRFS543-VB is also suitable for high power load switching scenarios, such as power distribution and protection switches. Its good thermal performance and high current handling capability enable it to excel in demanding power management applications.
The IRFS543-VB's high current carrying capability, low on-resistance, and good thermal management performance make it widely used in high-power power management, electric vehicle drive systems, and industrial equipment.
1. **Power management and switch control**: IRFS543-VB is suitable for power management and switch control applications. In switching power supplies, DC-DC converters, and power protection modules, this MOSFET provides stable switching performance and efficient power management, suitable for handling high current loads.
2. **Electric vehicle drive system**: In the motor drive system and battery management system of electric vehicles, IRFS543-VB can support high current switch control. Its low on-resistance helps reduce power loss and improve system efficiency, and is suitable for current regulation in electric drive systems.
3. **Industrial equipment**: In industrial equipment and motor control systems, IRFS543-VB can be used for high current switching applications. Its high current carrying capacity and low on-resistance enable it to provide reliable switching functions in high power devices.
4. **High power load switch**: IRFS543-VB is also suitable for high power load switching scenarios, such as power distribution and protection switches. Its good thermal performance and high current handling capability enable it to excel in demanding power management applications.
The IRFS543-VB's high current carrying capability, low on-resistance, and good thermal management performance make it widely used in high-power power management, electric vehicle drive systems, and industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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