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IRFS541-VB Product details
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1. Product Introduction
IRFS541-VB is a high-performance single N-channel power MOSFET that uses a TO220F package and advanced Trench process technology. The MOSFET can withstand a drain-source voltage (VDS) of up to 60V and supports a drain current (ID) of up to 45A. Its on-resistance (RDS(ON)) is 27mΩ when the gate-source voltage (VGS) is 10V, providing good current transfer efficiency. The gate-source threshold voltage (Vth) of IRFS541-VB is 1.7V, which allows it to be turned on at a lower gate-source voltage, making it suitable for applications that require high current and high efficiency.
IRFS541-VB is a high-performance single N-channel power MOSFET that uses a TO220F package and advanced Trench process technology. The MOSFET can withstand a drain-source voltage (VDS) of up to 60V and supports a drain current (ID) of up to 45A. Its on-resistance (RDS(ON)) is 27mΩ when the gate-source voltage (VGS) is 10V, providing good current transfer efficiency. The gate-source threshold voltage (Vth) of IRFS541-VB is 1.7V, which allows it to be turned on at a lower gate-source voltage, making it suitable for applications that require high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 27mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology type**: Trench MOSFET technology
- **Typical applications**: Power switch, motor drive
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 27mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology type**: Trench MOSFET technology
- **Typical applications**: Power switch, motor drive
Domain and module applications：
3. Applications and Module Examples
**Power Switch**: The IRFS541-VB is ideally suited for use as a power switch due to its low on-resistance and high current capability. It provides efficient current switching in DC-DC converters and AC-DC converters, reducing power losses and improving the overall efficiency of the system.
**Motor Driver**: In industrial and automotive applications, this MOSFET can be used in motor drive systems. The high current carrying capacity of the IRFS541-VB is suitable for controlling the drive circuit of a DC motor or stepper motor, ensuring stable motor operation and providing efficient power control.
**Battery Management System (BMS)**: In electric vehicles and energy storage systems, the high current capability and low on-resistance of the IRFS541-VB make it suitable for use in battery management systems. It can effectively manage the battery charge and discharge process and provide a reliable current path, thereby improving the overall efficiency and safety of the system.
**Power Amplifier**: In audio or RF power amplifiers, the IRFS541-VB can be used for power switching applications. Its high current handling capability and low on-resistance enable it to handle high-power signals, improving the performance and stability of the amplifier.
In these areas and modules, the high current carrying capability and low on-resistance of IRFS541-VB ensure high efficiency and reliability of the system.
**Power Switch**: The IRFS541-VB is ideally suited for use as a power switch due to its low on-resistance and high current capability. It provides efficient current switching in DC-DC converters and AC-DC converters, reducing power losses and improving the overall efficiency of the system.
**Motor Driver**: In industrial and automotive applications, this MOSFET can be used in motor drive systems. The high current carrying capacity of the IRFS541-VB is suitable for controlling the drive circuit of a DC motor or stepper motor, ensuring stable motor operation and providing efficient power control.
**Battery Management System (BMS)**: In electric vehicles and energy storage systems, the high current capability and low on-resistance of the IRFS541-VB make it suitable for use in battery management systems. It can effectively manage the battery charge and discharge process and provide a reliable current path, thereby improving the overall efficiency and safety of the system.
**Power Amplifier**: In audio or RF power amplifiers, the IRFS541-VB can be used for power switching applications. Its high current handling capability and low on-resistance enable it to handle high-power signals, improving the performance and stability of the amplifier.
In these areas and modules, the high current carrying capability and low on-resistance of IRFS541-VB ensure high efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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