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IRFS4710TRRPBF-VB Product details
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IRFS4710TRRPBF-VB Product Introduction
**IRFS4710TRRPBF-VB** is a high-performance single-tube N-channel MOSFET packaged in TO263. It is designed with Trench technology and has high current handling capability and low on-resistance. This MOSFET is suitable for high-voltage, high-current applications, especially in electronic modules that require high-efficiency switching operations.
**IRFS4710TRRPBF-VB** is a high-performance single-tube N-channel MOSFET packaged in TO263. It is designed with Trench technology and has high current handling capability and low on-resistance. This MOSFET is suitable for high-voltage, high-current applications, especially in electronic modules that require high-efficiency switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single tube N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Power Management System**: In power management systems, the IRFS4710TRRPBF-VB can effectively improve power conversion efficiency and reduce power losses due to its low on-resistance and high current handling capability. This makes it an important component in high-efficiency power supply designs, such as DC-DC converters and switching power supply modules.
2. **Electric Vehicle (EV) Drive System**: Due to its high current carrying capacity, this MOSFET plays a key role in the drive system of electric vehicles. It can handle the high current requirements of electric vehicle motors and maintain stable operating performance under high voltage conditions, thereby improving the driving efficiency and safety of the entire vehicle.
3. **Industrial Automation**: In industrial automation equipment, the high current and low on-resistance characteristics of the IRFS4710TRRPBF-VB make it suitable for applications such as motor drives and power switches. This ensures the reliable operation of industrial equipment and improves the overall efficiency of the system.
4. **High-power LED driver**: In high-power LED driver circuits, the low on-resistance and high current handling capability of this MOSFET enables it to effectively drive high-power LEDs, provide a stable current, and ensure high efficiency and stability for long-term operation.
These application examples demonstrate the important role of IRFS4710TRRPBF-VB in various electronic modules with high voltage and high current requirements, which can effectively improve the overall performance and reliability of the system.
1. **Power Management System**: In power management systems, the IRFS4710TRRPBF-VB can effectively improve power conversion efficiency and reduce power losses due to its low on-resistance and high current handling capability. This makes it an important component in high-efficiency power supply designs, such as DC-DC converters and switching power supply modules.
2. **Electric Vehicle (EV) Drive System**: Due to its high current carrying capacity, this MOSFET plays a key role in the drive system of electric vehicles. It can handle the high current requirements of electric vehicle motors and maintain stable operating performance under high voltage conditions, thereby improving the driving efficiency and safety of the entire vehicle.
3. **Industrial Automation**: In industrial automation equipment, the high current and low on-resistance characteristics of the IRFS4710TRRPBF-VB make it suitable for applications such as motor drives and power switches. This ensures the reliable operation of industrial equipment and improves the overall efficiency of the system.
4. **High-power LED driver**: In high-power LED driver circuits, the low on-resistance and high current handling capability of this MOSFET enables it to effectively drive high-power LEDs, provide a stable current, and ensure high efficiency and stability for long-term operation.
These application examples demonstrate the important role of IRFS4710TRRPBF-VB in various electronic modules with high voltage and high current requirements, which can effectively improve the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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