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IRFS4410TRPBF-VB Product details
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1. Product Introduction
IRFS4410TRPBF-VB is a high-efficiency single N-channel power MOSFET in TO263 package based on Trench process technology. Its drain-source voltage (VDS) is 100V and can carry a drain current (ID) of up to 100A. This MOSFET has an on-resistance (RDS(ON)) as low as 10mΩ when the gate-source voltage (VGS) is 10V, ensuring excellent current transfer efficiency and low power operation. Its gate-source threshold voltage (Vth) is 2.5V, which allows it to be turned on at a lower gate-source voltage, making it suitable for a variety of applications requiring high current and high efficiency.
IRFS4410TRPBF-VB is a high-efficiency single N-channel power MOSFET in TO263 package based on Trench process technology. Its drain-source voltage (VDS) is 100V and can carry a drain current (ID) of up to 100A. This MOSFET has an on-resistance (RDS(ON)) as low as 10mΩ when the gate-source voltage (VGS) is 10V, ensuring excellent current transfer efficiency and low power operation. Its gate-source threshold voltage (Vth) is 2.5V, which allows it to be turned on at a lower gate-source voltage, making it suitable for a variety of applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench MOSFET technology
- **Typical applications**: Power switch, high current control
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench MOSFET technology
- **Typical applications**: Power switch, high current control
Domain and module applications：
3. Applications and module examples
**Power switch**: The IRFS4410TRPBF-VB is ideally suited for use as a power switch due to its low on-resistance and high current carrying capability. In DC-DC converters and AC-DC converters, it can provide efficient current switching, reduce power losses and improve conversion efficiency.
**Motor drive**: In industrial automation and power tools, the high current carrying capability of this MOSFET makes it suitable for motor drive systems. It is able to handle high current loads, ensure stable drive of the motor, and provide efficient power control.
**Battery management system (BMS)**: The IRFS4410TRPBF-VB is suitable for use in battery management systems, especially in electric vehicles and energy storage systems. Its high current capability and low on-resistance enable it to provide a reliable current path during battery charging and discharging, and improve the overall efficiency of the system.
**Power Amplifier**: In power amplifier applications, the IRFS4410TRPBF-VB can be used as a high current switch to control power flow and enhance the performance of the amplifier, suitable for applications such as audio amplifiers and RF amplifiers.
These areas and modules can benefit from the high current carrying capability and low on-resistance of the IRFS4410TRPBF-VB, ensuring high efficiency and reliability of the system.
**Power switch**: The IRFS4410TRPBF-VB is ideally suited for use as a power switch due to its low on-resistance and high current carrying capability. In DC-DC converters and AC-DC converters, it can provide efficient current switching, reduce power losses and improve conversion efficiency.
**Motor drive**: In industrial automation and power tools, the high current carrying capability of this MOSFET makes it suitable for motor drive systems. It is able to handle high current loads, ensure stable drive of the motor, and provide efficient power control.
**Battery management system (BMS)**: The IRFS4410TRPBF-VB is suitable for use in battery management systems, especially in electric vehicles and energy storage systems. Its high current capability and low on-resistance enable it to provide a reliable current path during battery charging and discharging, and improve the overall efficiency of the system.
**Power Amplifier**: In power amplifier applications, the IRFS4410TRPBF-VB can be used as a high current switch to control power flow and enhance the performance of the amplifier, suitable for applications such as audio amplifiers and RF amplifiers.
These areas and modules can benefit from the high current carrying capability and low on-resistance of the IRFS4410TRPBF-VB, ensuring high efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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