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IRFS38N20DPBF-VB Product details
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1. Product Introduction
IRFS38N20DPBF-VB is a high voltage, high current N-channel MOSFET in TO-263 package. This MOSFET is designed to handle high voltage and high current applications and can provide stable performance in harsh electrical environments. Its maximum drain-source voltage (VDS) is 200V, which can withstand higher voltages, while its maximum drain current (ID) is 45A, which is suitable for high current applications. IRFS38N20DPBF-VB uses advanced Trench technology and has a relatively low on-resistance (RDS(ON)), which is 38mΩ at VGS of 10V, which helps reduce power consumption and improve system efficiency.
IRFS38N20DPBF-VB is a high voltage, high current N-channel MOSFET in TO-263 package. This MOSFET is designed to handle high voltage and high current applications and can provide stable performance in harsh electrical environments. Its maximum drain-source voltage (VDS) is 200V, which can withstand higher voltages, while its maximum drain current (ID) is 45A, which is suitable for high current applications. IRFS38N20DPBF-VB uses advanced Trench technology and has a relatively low on-resistance (RDS(ON)), which is 38mΩ at VGS of 10V, which helps reduce power consumption and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +175°C
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +175°C
Domain and module applications：
3. Application fields and modules
IRFS38N20DPBF-VB MOSFET is suitable for multiple fields and modules with high voltage and high current requirements:
1. **High voltage power management**: In high voltage power management systems, such as high voltage DC-DC converters and power protection modules, this MOSFET can withstand voltages up to 200V and is suitable for switch control of high voltage power supplies. Its low on-resistance effectively reduces power consumption and improves conversion efficiency.
2. **Industrial motor drive**: This MOSFET is suitable for industrial motor drive applications, such as high power motor control and industrial automation equipment. It is capable of handling high currents, providing stable current management and efficient motor control.
3. **Electric vehicle and new energy applications**: In the battery management system and power control module of electric vehicles and new energy vehicles, IRFS38N20DPBF-VB is able to handle high voltage and high current loads, ensuring efficient operation and reliability of the system.
4. **Inverter and Energy Conversion**: In inverters and energy converters, such as photovoltaic power generation systems and energy storage devices, this MOSFET can be used for switching operations on the high-voltage side to provide efficient power conversion and improve the energy efficiency and stability of the overall system.
IRFS38N20DPBF-VB MOSFET is suitable for multiple fields and modules with high voltage and high current requirements:
1. **High voltage power management**: In high voltage power management systems, such as high voltage DC-DC converters and power protection modules, this MOSFET can withstand voltages up to 200V and is suitable for switch control of high voltage power supplies. Its low on-resistance effectively reduces power consumption and improves conversion efficiency.
2. **Industrial motor drive**: This MOSFET is suitable for industrial motor drive applications, such as high power motor control and industrial automation equipment. It is capable of handling high currents, providing stable current management and efficient motor control.
3. **Electric vehicle and new energy applications**: In the battery management system and power control module of electric vehicles and new energy vehicles, IRFS38N20DPBF-VB is able to handle high voltage and high current loads, ensuring efficient operation and reliability of the system.
4. **Inverter and Energy Conversion**: In inverters and energy converters, such as photovoltaic power generation systems and energy storage devices, this MOSFET can be used for switching operations on the high-voltage side to provide efficient power conversion and improve the energy efficiency and stability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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