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IRFS350A-VB Product details
Back to previous pageProduct introduction：
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The IRFS350A-VB is a high voltage, high current single N-channel MOSFET in a TO247 package, designed for applications requiring high voltage and high current. With a maximum drain-source voltage (VDS) of up to 500V and a gate-source voltage (VGS) of ±30V, this MOSFET can withstand extremely high voltages and currents. The turn-on voltage (Vth) is 3.8V, ensuring stable switching of the device at a lower gate-source voltage. The on-resistance (RDS(ON)) is 80mΩ@VGS=10V, which is suitable for low power consumption requirements under high current conditions. Using SJ_Multi-EPI technology, the IRFS350A-VB performs well in high voltage and high current applications, ensuring good switching performance and high reliability.
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The IRFS350A-VB is a high voltage, high current single N-channel MOSFET in a TO247 package, designed for applications requiring high voltage and high current. With a maximum drain-source voltage (VDS) of up to 500V and a gate-source voltage (VGS) of ±30V, this MOSFET can withstand extremely high voltages and currents. The turn-on voltage (Vth) is 3.8V, ensuring stable switching of the device at a lower gate-source voltage. The on-resistance (RDS(ON)) is 80mΩ@VGS=10V, which is suitable for low power consumption requirements under high current conditions. Using SJ_Multi-EPI technology, the IRFS350A-VB performs well in high voltage and high current applications, ensuring good switching performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Package Type**: TO247
- **Channel Configuration**: Single N-Channel
- **Drain-Source Voltage(VDS)**: 500V
- **Gate-Source Voltage(VGS)**: ±30V
- **Throw-Up Voltage(Vth)**: 3.8V
- **On-Resistance(RDS(ON))**:
- 80mΩ @ VGS = 10V
- **Drain Current(ID)**: 40A
- **Technology Type**: SJ_Multi-EPI
- **Operating Temperature Range**: -55°C to +175°C
- **Power Dissipation(Ptot)**: 250W
- **Thermal Resistance(RθJC)**: 0.5°C/W
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- **Package Type**: TO247
- **Channel Configuration**: Single N-Channel
- **Drain-Source Voltage(VDS)**: 500V
- **Gate-Source Voltage(VGS)**: ±30V
- **Throw-Up Voltage(Vth)**: 3.8V
- **On-Resistance(RDS(ON))**:
- 80mΩ @ VGS = 10V
- **Drain Current(ID)**: 40A
- **Technology Type**: SJ_Multi-EPI
- **Operating Temperature Range**: -55°C to +175°C
- **Power Dissipation(Ptot)**: 250W
- **Thermal Resistance(RθJC)**: 0.5°C/W
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Domain and module applications：
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1. **High-voltage power management**:
IRFS350A-VB is an ideal choice for high-voltage power management systems. Its drain-source voltage of up to 500V makes it suitable for high-voltage switching power supplies (SMPS) and DC-DC converters, and can effectively handle high voltage and high current application requirements to ensure efficient and stable operation of the system.
2. **Power inverter**:
In power inverters, such as solar inverters and industrial inverters, this MOSFET can handle voltages up to 500V and currents up to 40A. Its low on-resistance and high withstand voltage characteristics ensure high efficiency and long life of the inverter under high power conditions, optimizing energy conversion efficiency.
3. **Motor drive and industrial control**:
IRFS350A-VB is suitable for motor drive systems and industrial control applications, especially those that require high voltage and high current. Its high current capability and low power consumption enable it to reliably drive high-power motors and maintain stable operation in industrial automation systems.
4. **Power Amplifiers and High-Voltage Switches**:
This MOSFET is also widely used in power amplifiers and high-voltage switch modules. Its high voltage withstand capability and low on-resistance enable it to perform well under high power and high voltage conditions, making it suitable for a variety of high-power switching and amplification applications.
1. **High-voltage power management**:
IRFS350A-VB is an ideal choice for high-voltage power management systems. Its drain-source voltage of up to 500V makes it suitable for high-voltage switching power supplies (SMPS) and DC-DC converters, and can effectively handle high voltage and high current application requirements to ensure efficient and stable operation of the system.
2. **Power inverter**:
In power inverters, such as solar inverters and industrial inverters, this MOSFET can handle voltages up to 500V and currents up to 40A. Its low on-resistance and high withstand voltage characteristics ensure high efficiency and long life of the inverter under high power conditions, optimizing energy conversion efficiency.
3. **Motor drive and industrial control**:
IRFS350A-VB is suitable for motor drive systems and industrial control applications, especially those that require high voltage and high current. Its high current capability and low power consumption enable it to reliably drive high-power motors and maintain stable operation in industrial automation systems.
4. **Power Amplifiers and High-Voltage Switches**:
This MOSFET is also widely used in power amplifiers and high-voltage switch modules. Its high voltage withstand capability and low on-resistance enable it to perform well under high power and high voltage conditions, making it suitable for a variety of high-power switching and amplification applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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