IRFS3507PBF-VB Product details
Product introduction:
IRFS3507PBF-VB is a high-performance N-Channel MOSFET in TO263 package. This MOSFET uses advanced Trench technology to provide excellent current handling capability and low on-resistance. Its drain-source voltage (VDS) reaches 80V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3V. The on-resistance (RDS(ON)) of the MOSFET is 6mΩ at VGS=10V and 10mΩ at VGS=4.5V, and the maximum drain current (ID) is 120A. Its high current capability and low on-resistance make it particularly suitable for efficient power management and switching applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Power consumption (Ptot)**: up to 150W
- **Switching speed**: high speed, suitable for high frequency applications
Domain and module applications:
1. **Power management**: The high current capability and low on-resistance of the IRFS3507PBF-VB make it ideal for use in power management modules such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its low on-resistance helps reduce power loss, improve power efficiency and system stability.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a motor drive switch, capable of handling high currents and reducing heat generation during motor operation. This is especially important for industrial and automotive applications that require efficient and reliable motor control.
3. **DC-DC converter**: The IRFS3507PBF-VB provides excellent performance in DC-DC converters. Its low on-resistance and high current handling capability enable it to efficiently convert voltages, making it suitable for a variety of high-power voltage conversion needs.
4. **Power amplifier**: This MOSFET can also be used in power amplifier modules, especially in high-frequency applications, where its high-speed switching characteristics support efficient power amplification and signal processing.
5. **Automotive electronics**: In automotive electronic systems, the high current capability and stability of the IRFS3507PBF-VB make it suitable for high-power load control, such as power windows, seat adjustment, and other automotive electronic control systems.
6. **Charging management system**: The high current and low on-resistance characteristics of this MOSFET make it suitable for battery charging management systems, which can effectively manage the charging process and ensure safe and efficient charging of the battery.
The high current handling capability and low on-resistance of the IRFS3507PBF-VB make it widely used in power management, motor control, DC-DC converters, and automotive electronics, providing efficient and stable power conversion and control solutions.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image