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IRFS31N20DTRR-VB Product details
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Product Introduction
**IRFS31N20DTRR-VB** is a high-performance N-Channel MOSFET in TO263 package. It is designed to handle high voltage and high current applications, with excellent switching performance and low on-resistance. This MOSFET is manufactured using Trench technology to improve efficiency and reliability, and is suitable for a variety of power management and switching applications.
**IRFS31N20DTRR-VB** is a high-performance N-Channel MOSFET in TO263 package. It is designed to handle high voltage and high current applications, with excellent switching performance and low on-resistance. This MOSFET is manufactured using Trench technology to improve efficiency and reliability, and is suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ (at VGS=10V)
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ (at VGS=10V)
- **Drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
**1. Power Management: ** The IRFS31N20DTRR-VB is suitable for switching and protection circuits in power management modules due to its high voltage handling capability and low on-resistance. For example, in a switch mode power supply (SMPS), this MOSFET can be used as the main switching element to improve conversion efficiency and system stability.
**2. DC-DC Converter: ** In high voltage DC-DC converters, the low RDS(ON) of the IRFS31N20DTRR-VB makes it ideal for use as a synchronous rectifier or switching MOSFET to reduce power consumption and heat generation, thereby improving the overall performance of the converter.
**3. Inverter and Motor Drive: ** In inverter and motor drive applications, the high drain current carrying capability of this MOSFET enables it to handle high power loads. It can be used to control the drive signal of the motor, providing an efficient power switching solution.
**4. High-frequency switching applications: ** Due to its good switching performance and low RDS(ON), the IRFS31N20DTRR-VB is also suitable for high-frequency switching applications such as radio frequency (RF) amplifiers and high-frequency switching power supplies to ensure clear signal transmission and efficient energy conversion.
These application areas take advantage of the high voltage tolerance and low on-resistance characteristics of this MOSFET to help achieve efficient power management and control systems.
**1. Power Management: ** The IRFS31N20DTRR-VB is suitable for switching and protection circuits in power management modules due to its high voltage handling capability and low on-resistance. For example, in a switch mode power supply (SMPS), this MOSFET can be used as the main switching element to improve conversion efficiency and system stability.
**2. DC-DC Converter: ** In high voltage DC-DC converters, the low RDS(ON) of the IRFS31N20DTRR-VB makes it ideal for use as a synchronous rectifier or switching MOSFET to reduce power consumption and heat generation, thereby improving the overall performance of the converter.
**3. Inverter and Motor Drive: ** In inverter and motor drive applications, the high drain current carrying capability of this MOSFET enables it to handle high power loads. It can be used to control the drive signal of the motor, providing an efficient power switching solution.
**4. High-frequency switching applications: ** Due to its good switching performance and low RDS(ON), the IRFS31N20DTRR-VB is also suitable for high-frequency switching applications such as radio frequency (RF) amplifiers and high-frequency switching power supplies to ensure clear signal transmission and efficient energy conversion.
These application areas take advantage of the high voltage tolerance and low on-resistance characteristics of this MOSFET to help achieve efficient power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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