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IRFS31N20DTRRP-VB Product details
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IRFS31N20DTRRP-VB MOSFET Product Introduction
IRFS31N20DTRRP-VB is a single N-channel MOSFET packaged in TO263. The device uses trench technology and is designed for high voltage applications and can withstand drain-source voltages up to 200V. The IRFS31N20DTRRP-VB provides high current handling capability and relatively low on-resistance, making it perform well in electronic circuits that require high voltage and high current. This MOSFET is suitable for power management, switch control, and various high voltage load applications.
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IRFS31N20DTRRP-VB is a single N-channel MOSFET packaged in TO263. The device uses trench technology and is designed for high voltage applications and can withstand drain-source voltages up to 200V. The IRFS31N20DTRRP-VB provides high current handling capability and relatively low on-resistance, making it perform well in electronic circuits that require high voltage and high current. This MOSFET is suitable for power management, switch control, and various high voltage load applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRFS31N20DTRRP-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 40A
- **Technology type**: Trench technology
The high drain-source voltage capability and high current carrying capability of this MOSFET make it suitable for high-voltage power management and switch control applications. Despite its relatively high on-resistance, its stability in high-voltage environments and high current handling capabilities still make it a reliable choice.
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- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 40A
- **Technology type**: Trench technology
The high drain-source voltage capability and high current carrying capability of this MOSFET make it suitable for high-voltage power management and switch control applications. Despite its relatively high on-resistance, its stability in high-voltage environments and high current handling capabilities still make it a reliable choice.
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Domain and module applications：
Application fields and module examples
1. **High voltage power management**: IRFS31N20DTRRP-VB is suitable for switch control in high voltage power management systems. It can handle drain-source voltages up to 200V and is suitable for switching and regulating high voltage power supplies, such as power converters, UPS systems, and power distribution modules.
2. **DC-DC converter**: In high voltage DC-DC converters, such as those used in industrial control, telecommunications equipment, or high power supply modules, IRFS31N20DTRRP-VB can effectively handle high voltage and high current loads. Its lower on-resistance helps reduce power consumption and improve conversion efficiency.
3. **Motor drive**: In motor drive systems that require high voltage control, this MOSFET can be used for motor switch control. Its high voltage withstand capability ensures reliable operation under high voltage power supplies, suitable for electric vehicle drive systems or industrial motor control applications.
4. **High voltage switch**: IRFS31N20DTRRP-VB can be used in high voltage switch control applications, such as high voltage power protection switch and high voltage load switch control. Its high voltage withstand capability can effectively protect the circuit from overvoltage damage.
IRFS31N20DTRRP-VB provides excellent high voltage and high current handling capabilities in these application areas, and is widely used in various power management and control systems that require high voltage and high efficiency.
1. **High voltage power management**: IRFS31N20DTRRP-VB is suitable for switch control in high voltage power management systems. It can handle drain-source voltages up to 200V and is suitable for switching and regulating high voltage power supplies, such as power converters, UPS systems, and power distribution modules.
2. **DC-DC converter**: In high voltage DC-DC converters, such as those used in industrial control, telecommunications equipment, or high power supply modules, IRFS31N20DTRRP-VB can effectively handle high voltage and high current loads. Its lower on-resistance helps reduce power consumption and improve conversion efficiency.
3. **Motor drive**: In motor drive systems that require high voltage control, this MOSFET can be used for motor switch control. Its high voltage withstand capability ensures reliable operation under high voltage power supplies, suitable for electric vehicle drive systems or industrial motor control applications.
4. **High voltage switch**: IRFS31N20DTRRP-VB can be used in high voltage switch control applications, such as high voltage power protection switch and high voltage load switch control. Its high voltage withstand capability can effectively protect the circuit from overvoltage damage.
IRFS31N20DTRRP-VB provides excellent high voltage and high current handling capabilities in these application areas, and is widely used in various power management and control systems that require high voltage and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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