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IRFS31N20DTRL-VB Product details
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IRFS31N20DTRL-VB MOSFET Product Introduction
IRFS31N20DTRL-VB is a high voltage N-Channel MOSFET designed for high voltage and high current applications. It uses **Trench technology** to provide excellent conduction performance and high efficiency. The MOSFET is packaged in **TO263** and supports **200V** of **VDS (drain-source voltage)** and **±20V** of **VGS (gate-source voltage)**. Its **Vth (threshold voltage)** is **3V**, **RDS(ON)** is **48mΩ** when VGS=10V, and the maximum drain current **ID** is **40A**. These features of IRFS31N20DTRL-VB make it suitable for a variety of switching applications that require high voltage and high current handling.
IRFS31N20DTRL-VB is a high voltage N-Channel MOSFET designed for high voltage and high current applications. It uses **Trench technology** to provide excellent conduction performance and high efficiency. The MOSFET is packaged in **TO263** and supports **200V** of **VDS (drain-source voltage)** and **±20V** of **VGS (gate-source voltage)**. Its **Vth (threshold voltage)** is **3V**, **RDS(ON)** is **48mΩ** when VGS=10V, and the maximum drain current **ID** is **40A**. These features of IRFS31N20DTRL-VB make it suitable for a variety of switching applications that require high voltage and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Drain Current (ID)**: 40A
- **Technology**: Trench
- **Power Dissipation**: Suitable for high power handling due to low RDS(ON)
- **Operating Temperature**: Typically ranges from -55°C to 175°C
- **Gate Charge (Qg)**: Moderate, supports fast switching applications
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Drain Current (ID)**: 40A
- **Technology**: Trench
- **Power Dissipation**: Suitable for high power handling due to low RDS(ON)
- **Operating Temperature**: Typically ranges from -55°C to 175°C
- **Gate Charge (Qg)**: Moderate, supports fast switching applications
Domain and module applications：
Application fields and modules of IRFS31N20DTRL-VB
The high voltage and high current characteristics of IRFS31N20DTRL-VB make it excel in multiple fields and modules:
1. **Power switch**: In high-voltage DC-DC converters and switching power supplies (SMPS), IRFS31N20DTRL-VB can handle voltages up to 200V and is suitable for high-voltage power management modules. Its low on-resistance helps improve system efficiency and reduce energy loss.
2. **Battery management system**: Suitable for battery protection and management circuits, especially high-voltage battery packs such as electric vehicles or large energy storage systems, which can effectively ensure the safety and stability of the battery.
3. **Industrial control system**: In industrial automation and control systems, IRFS31N20DTRL-VB can be used in high-voltage motor drive and control modules, capable of handling high current loads and providing reliable switching performance and efficient power management.
4. **Automotive electronics**: In automotive power systems, such as power seats, power windows and other applications, the IRFS31N20DTRL-VB can handle high voltage loads, ensuring stable switching operation and reliable performance.
5. **Communication equipment**: This MOSFET is also suitable for power management and protection circuits in communication equipment, capable of handling high voltage power and effectively protecting the equipment to ensure long-term stable operation.
The high voltage and high current characteristics of IRFS31N20DTRL-VB make it excel in multiple fields and modules:
1. **Power switch**: In high-voltage DC-DC converters and switching power supplies (SMPS), IRFS31N20DTRL-VB can handle voltages up to 200V and is suitable for high-voltage power management modules. Its low on-resistance helps improve system efficiency and reduce energy loss.
2. **Battery management system**: Suitable for battery protection and management circuits, especially high-voltage battery packs such as electric vehicles or large energy storage systems, which can effectively ensure the safety and stability of the battery.
3. **Industrial control system**: In industrial automation and control systems, IRFS31N20DTRL-VB can be used in high-voltage motor drive and control modules, capable of handling high current loads and providing reliable switching performance and efficient power management.
4. **Automotive electronics**: In automotive power systems, such as power seats, power windows and other applications, the IRFS31N20DTRL-VB can handle high voltage loads, ensuring stable switching operation and reliable performance.
5. **Communication equipment**: This MOSFET is also suitable for power management and protection circuits in communication equipment, capable of handling high voltage power and effectively protecting the equipment to ensure long-term stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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