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IRFS31N20DPBF-VB Product details
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1. IRFS31N20DPBF-VB Product Introduction
IRFS31N20DPBF-VB is a high-performance N-channel MOSFET manufactured with advanced Trench technology and designed for high voltage and high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 200V, a maximum gate-source voltage (VGS) of ±20V, and a maximum drain current (ID) of 40A. Its on-resistance (RDS(ON)) is 48mΩ at VGS=10V, and the package is TO263. IRFS31N20DPBF-VB provides excellent switching performance and efficient power management, and is suitable for various electronic applications requiring high voltage and high current.
IRFS31N20DPBF-VB is a high-performance N-channel MOSFET manufactured with advanced Trench technology and designed for high voltage and high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 200V, a maximum gate-source voltage (VGS) of ±20V, and a maximum drain current (ID) of 40A. Its on-resistance (RDS(ON)) is 48mΩ at VGS=10V, and the package is TO263. IRFS31N20DPBF-VB provides excellent switching performance and efficient power management, and is suitable for various electronic applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of IRFS31N20DPBF-VB
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Power consumption (Pd)**: 75W
- **Maximum junction temperature (Tj)**: +175°C
- **Operating mode**: Enhancement mode
- **Technology**: Trench technology
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Power consumption (Pd)**: 75W
- **Maximum junction temperature (Tj)**: +175°C
- **Operating mode**: Enhancement mode
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
1. **Power converter**: IRFS31N20DPBF-VB plays a key role in high-voltage switching power supplies and DC-DC converters. Its 200V drain-source voltage and low 48mΩ on-resistance enable it to efficiently handle high-power applications, reduce power losses, and improve overall system efficiency.
2. **Electric Vehicles (EV)**: In the motor drive and battery management system of electric vehicles, this MOSFET can effectively handle high-voltage and high-current switching requirements. Its high current carrying capacity and low on-resistance make it suitable for electric vehicle motor control and charging management systems, providing stable power conversion and control.
3. **Industrial Automation**: IRFS31N20DPBF-VB can be used for high-voltage motor control and load switching applications in industrial equipment. Its high current and high voltage handling capabilities ensure reliable control of motors in industrial environments, suitable for operations such as starting, stopping, and regulating motor speed.
4. **Photovoltaic inverter**: In photovoltaic power generation systems, this MOSFET is used for high voltage switching and power management of photovoltaic inverters. Its high voltage and high current characteristics ensure efficient energy conversion and system protection of photovoltaic systems, and improve system stability and efficiency.
1. **Power converter**: IRFS31N20DPBF-VB plays a key role in high-voltage switching power supplies and DC-DC converters. Its 200V drain-source voltage and low 48mΩ on-resistance enable it to efficiently handle high-power applications, reduce power losses, and improve overall system efficiency.
2. **Electric Vehicles (EV)**: In the motor drive and battery management system of electric vehicles, this MOSFET can effectively handle high-voltage and high-current switching requirements. Its high current carrying capacity and low on-resistance make it suitable for electric vehicle motor control and charging management systems, providing stable power conversion and control.
3. **Industrial Automation**: IRFS31N20DPBF-VB can be used for high-voltage motor control and load switching applications in industrial equipment. Its high current and high voltage handling capabilities ensure reliable control of motors in industrial environments, suitable for operations such as starting, stopping, and regulating motor speed.
4. **Photovoltaic inverter**: In photovoltaic power generation systems, this MOSFET is used for high voltage switching and power management of photovoltaic inverters. Its high voltage and high current characteristics ensure efficient energy conversion and system protection of photovoltaic systems, and improve system stability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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